semiconductor igbt module3

Brand Name:Original Factory

Model Number:FP25R12KT4B11BPSA1

Place of Origin:CN

...IGBT Modules FP25R12KT4B11BPSA1 Discrete Semiconductor IGBT Modules Product Description Of FP25R12KT4B11BPSA1 FP25R12KT4B11BPSA1 is EconoPIM™2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diodeund PressFIT/NTC. ​Specification Of FP25R12KT4B11BPSA1 Part Number: FP25R12KT4B11BPSA1 Rated Resistance: 5 KΩ Deviation Of R100: -5-5 % Power Dissipation: 20 MW B-Value: 3375 K Symbol Size: 16x16 Features Of Automotive IGBT...

Categories:IGBT Modules

Country/Region:china

IGBT Module 600 V 7.2 A 23 W Through Hole IMS-2

Brand Name:ROHM

Model Number:RGS80TSX2DHRC11

Place of Origin:Japan

... & Soft Recovery FRD ●Pb - free Lead Plating ; RoHS Compliant Description: RGS Field Stop Trench Automotive IGBTs ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that are available in 1200V and

Brand Name:SILICON

Model Number:SII9134CTU

Place of Origin:CHINA

SiI9134 HDMI Deep Color Transmitter is a third- Supports DVD and HD MPEG decoders generation High Definition Multimedia Interface 24-bit, 30-bit, and 36-bit RGB/YCbCr 4:4:4 (Deep Color) (HDMI®) transmitter that provides a simple method of 16-bit, 20-bit...

Brand Name:Vishay Semiconductors

Model Number:VS-GT90DA120U

... IGBT Module Trench Field Stop Single 1200 V 169 A 781 W Chassis Mount SOT-227 Vishay Semiconductors IGBT Power Modules Vishay Semiconductors IGBT Power Modules feature trench PT IGBT technology and are geared toward TIG welding machines. These IGBTs ...

Brand Name:Microchip

Model Number:APT25GT120BRG

Place of Origin:USA

Discrete Semiconductors APT25GT120BRG TO-247-3 IGBT Transistors Product Description: The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ...

Brand Name:IXYS

Model Number:IXGH24N170

Place of Origin:CHINA

...IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products 　 Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT...

Brand Name:IXYS

Model Number:IXGH24N170

...IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products 　 Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT...

Brand Name:Mitsubishi

Model Number:CM400DY-12H

Place of Origin:Japan

...IGBT Module Original Power Igbt Module CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE Mitsubishi Electric Semiconductor Mitsubishi Electric Semiconductor QM7E2Y-H HIGH POWER SWITCHING USE INSULATED TYPE Mitsubishi Electric Semiconductor CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Mitsubishi Electric Semiconductor CM10DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Mitsubishi Electric Semiconductor...

Brand Name:StarPower

Model Number:GD200FFY120C6S

Place of Origin:CHN

... IGBT MODULE 1.2KV 309A SEMICONDUCTOR Manufacturer: StarPower Europe AG Product Category: IGBT MODULE RoHS: Details Type: IGBT MODULE Brand: StarPower Operating Supply Voltage: 1.2 V Packaging: Standard Subcategory: IGBT MODULE Description STARPOWER IGBT ...

Brand Name:Infineon Technologies

Model Number:IR2104STRPBF

Place of Origin:Multi-origin

...Semiconductor IC Chip Package Type: STRPBF Description: The IR2104STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is designed to drive a wide range of power devices from low side referenced N-channel MOSFETs and IGBTs...

Brand Name:INFINEON

Model Number:FF300R17KE4

Place of Origin:Original

... Trench/Feld stopp IGBT 4und Emitter Controlled Diode 1 TechnischeInformation/TechnicalInformation FF300R17KE4 IGBT-Module IGBT-modules Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as

Model Number:FGY40T120SMD

...Semiconductor FGY40T120SMD - 1200 V, 40 A Field Stop Trench IGBT The FGY40T120SMD is a Field Stop Trench IGBT from ON Semiconductor, utilizing innovative FS Trench technology for optimal performance in hard switching applications. It offers a positive temperature coefficient, high speed switching, and low saturation voltage, making it suitable for solar inverters, UPS, welders, and PFC applications. Product Attributes Brand: ON Semiconductor

Brand Name:FUJI

Model Number:2MBI100TA-060-50

Place of Origin:JAPAN

2MBI100TA-060-50 Semiconductor IGBT frequency converter power module 100A 600V new original in stock Applicable category This specification is applied to IGBT Module named 2MBI100TA-060 Storage and transportation notes ・ The module should be stored at a ...

Model Number:SLIMDIP-S

... 6-Pack Transistor Polarity N and P-Channel Id - Continuous Drain Current 3.1 mA Operating Supply Voltage 300 V Subcategory Discrete Semiconductor Modules < DIPIPM >

Place of Origin:Japan

...IGBT Modules High Power Density High Reliability for New Energy Power Electronics PrimePACK IGBT Modules PrimePACK IGBT Modules deliver exceptional high power density and industry-leading high reliability, making them the ideal power semiconductor solution for a wide range of new energy power electronics applications. Engineered with advanced IGBT...

Brand Name:Infineon Technologies

Model Number:SPW35N60C3

Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ...

Model Number:DD1000

Place of Origin:China

... Semiconductor Series - Package Tape & Reel (TR) Product Status Active Technology Standard Voltage - DC Reverse (Vr) (Max) ...

Brand Name:WINNER

Model Number:MW001

Place of Origin:CHINA

...IGBT Power Semiconductor Bonding Wire Big current bearing capacity, widely adopted for IGBT high-power semiconductor bonding connection. Product Description Silver (Ag) alloy bonding wires have excellent electrical and thermal conductivity. They are also effective wires for optical semiconductor...

Place of Origin:PHILIPPINE

Brand Name:Toshiba Semiconductor

Model Number:MG500Q1US1

...IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Description: High power switching applications motor control application. Applications: High input impcdonce High speed : Tf =0.5us(Max) Trr = 0.5us(Max) Low saturation voltage: Vce(sat) = 4.0V(Max) Enhancement-Mode The electrodes are isolated from case. Specifications: part no. MG500Q1US1 Manufacturer Toshiba Semiconductor...