Sign In | Join Free | My chinacomputerparts.com
chinacomputerparts.com
Products
Search by Category
Home > Connectors >

RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W

Categories Diode Transistor
Brand Name: ROHM
Model Number: RGS80TSX2DHRC11
Certification: RoHS
Place of Origin: Japan
MOQ: 30 PCS
Price: Negotiable
Payment Terms: L/C, D/A, D/P, T/T
Supply Ability: 6K PCS
Delivery Time: 2-3 DAYS
Packaging Details: 30 PCS/Tube
Category: Single IGBTs
Mfr: Rohm Semiconductor
Package: Tube
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 555 W
Input Type: Standard
Gate Charge: 104 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr): 198 ns
Operating Temperature: -40°C ~ 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-247N
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
Submit Buying Request
  • Product Details
  • Company Profile

RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W

RGS80TSX2DHRC11 IGBT Trench Field Stop 1200 V 80 A 555 W Through Hole TO-247N


Features:

Low Collector - Emitter Saturation Voltage

Short Circuit Withstand Time 10μs

Qualified to AEC-Q101

Built in Very Fast & Soft Recovery FRD

Pb - free Lead Plating ; RoHS Compliant


Description:

RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that

are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes

to reducing the size and improving the efficiency of applications. The RGS IGBTs utilize original trench-gate and

thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (VCE(sat)) with

reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current

applications.


Quick Detail:

Manufacturer
Rohm Semiconductor
Manufacturer Product Number
RGS80TSX2DHRC11
Description
IGBT TRENCH FLD 1200V 80A TO247N
Detailed Description
IGBT Trench Field Stop 1200 V 80 A 555 W Through Hole TO-247N

Product Attributes:

TYPE
DESCRIPTION
Category
Single IGBTs
Mfr
Rohm Semiconductor
Product Status
Active
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
80 A
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
Power - Max
555 W
Switching Energy
3mJ (on), 3.1mJ (off)
Input Type
Standard
Gate Charge
104 nC
Td (on/off) @ 25°C
49ns/199ns
Test Condition
600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)
198 ns
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247N
Base Product Number
RGS80

Additional Resources:

ATTRIBUTEDESCRIPTION
Other Names846-RGS80TSX2DHRC11
Standard Package30

Data Picture:https://fscdn.rohm.com/en/products/databook/datasheet/discrete/igbt/rgs80tsx2dhr-e.pdf


China RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W factory
Send your message to this supplier
 
*From:
*To: Shenzhen Zhaocun Electronics Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)
 
Inquiry Cart 0