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ATP114-TL-H Diode Transistor P-Channel Mosfet 60 V 55A Ta 60W Tc Surface Mount ATPAK

Categories Diode Transistor
Brand Name: onsemi
Model Number: ATP114-TL-H
Certification: RoHS
Place of Origin: United States
MOQ: 1000 PCS
Price: Negotiable
Payment Terms: L/C, D/A, D/P, T/T
Supply Ability: 3K PCS
Delivery Time: 2-3 DAYS
Packaging Details: 1000 PCS/Tube
Category: Single FETs, MOSFETs
Mfr: onsemi
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
Power Dissipation (Max): 60W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ATPAK
Package / Case: ATPAK (2 Leads+Tab)
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ATP114-TL-H Diode Transistor P-Channel Mosfet 60 V 55A Ta 60W Tc Surface Mount ATPAK

ATP114-TL-H P-Channel 60 V 55A (Ta) 60W (Tc) Surface Mount ATPAK


Features:ATP114-TL-H

CategorySingle FETs, MOSFETs
Mfronsemi
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs92 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4000 pF @ 20 V
Power Dissipation (Max)60W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageATPAK
Package / CaseATPAK (2 Leads+Tab)
Base Product NumberATP114

Additional Resources

ATTRIBUTEDESCRIPTION
Other NamesATP114-TL-HOSDKR
ATP114-TL-HOSTR
ATP114-TL-H-ND
ATP114-TL-HOSCT
Standard Package3000

Data Picture:https://www.mouser.cn/datasheet/2/308/1/ATP114_D-2310176.pdf



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China ATP114-TL-H  Diode Transistor  P-Channel Mosfet 60 V 55A  Ta  60W  Tc Surface Mount ATPAK factory
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