pd55008 e high performance mosfet

Brand Name:Infineon Technologies

Model Number:IRFS4310TRLPBF

Place of Origin:original

... performance with low gate charge and low on-resistance. It is ideal for high-performance buck, boost, and inverting applications. Parameters: - Technology: N-Channel - Drain-Source Voltage: 60V - Drain Current: 28A - Gate-...

Brand Name:Original

Model Number:FQPF8N60C

... performance electronics applications. As an experienced seller in the electronics field, we are confident in recommending this component to customers who are seeking reliable and efficient electronics components. This MOSFET transistor delivers a low on

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:FAIRCHILD

Model Number:FDP085N10A

Place of Origin:America

... Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

...High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance...

Brand Name:ST

Model Number:TIP122

Place of Origin:Original Factory

MOSFET Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance...

Brand Name:UNICOMP

Model Number:AX8300

Place of Origin:China

Enhanced Tilt Inspection High Precision MOSFET Component Xray Inspection System AX8300 Unicomp Stable Performance The AX8300 X-ray inspection system is extensively deployed for circuit board and semiconductor inspection. As an offline X-ray solution, it...

Brand Name:Ziitek

Model Number:TIS800K

Place of Origin:China

High-Performance Semiconductor Electrical Insulating Sheet Thermal Conductive Silicone Gasket Sil Pad For IGBT Mosfet Products discription TIS®800K series is a thermal silicone product featuring a ceramic-filled layer coated on a polyimide film, offering excellent thermal conductivity and heat transfer performance...

Brand Name:SANKEN

Model Number:SSC9522S

Place of Origin:Japan

... a floating drive circuit for High-side MOSFET drive. ※SMZ = Soft-switched Multi-resonant Zero Current switch All switching periods work with soft switching operation. The IC is in SOP18 package, and suitable for high performance power supply system with

Brand Name:SHENZHENFREESCALE

Model Number:AOD5N50

Place of Origin:Original

AOD5N50 500V,5A N-Channel MOSFET General Description The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss...

Brand Name:NXP Semiconductors

Model Number:SI2304DS,215

Place of Origin:China

...MOSFET with Ultra-Low 45mandOmega; RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs andnbsp; Features TrenchMOSandtrade; technology Very fast switching Subminiature surface mount package. andnbsp; Applications Battery management High...

Place of Origin:CN

Brand Name:Original Factory

Model Number:STIB1560DM2-Z

STIB1560DM2-Z Automotive IGBT Modules High-Performance 3-Phase 600V MOSFET Power Driver Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Brand Name:SURINGMAX

Model Number:6 mosfets 14A/17A

Place of Origin:CHINA

Powerful 14A/17A controller with 6 mosfets for electric bicycle with direct price Specifications of our controller In order to better play the controller's performance and product stability, all of our controllers use imported power transistors. Rated ...

Brand Name:SEMIKRON

Model Number:SKKT460/22E

Place of Origin:Germany

SEMIKRON SKKT460/22E H4 2300V IGBT Module The SEMIKRON SKKT460/22E H4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module that combines MOSFET high input impedance with bipolar transistor low conduction loss for precise, efficient power ...

Brand Name:Haida

Model Number:9007-HD

Place of Origin:China

... evaluation in components such as optocouplers, magnetic couplers, IGBTs, MOSFETs, isolation substrates, and capacitors. This system performs precise partial discharge (PD) and withstand voltage tests, with a voltage output range of 0.1–10 kV and

Model Number:KGS-M5840

Place of Origin:Japan

Brand Name:YAMAHA

Full Part Number PCB Mark Applicable Machine Board Function Version Remark KGS-M5840-000 KGS-M5840 YG100 / YG100II Head Servo Driver Board Original base version KGS-M5840-001 KGS-M5840 YG100 Standard Module 6-spindle head control Ver 1.0 KGS-M5840-002 KGS-...

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Categories:Power Driver Modules

Country/Region:china

Power Driver Module MOSFET 1 Phase 40 A 31-PowerVFQFN Module