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| Categories | Integrated Circuit Components |
|---|---|
| Brand Name: | NXP Semiconductors |
| Model Number: | SI2304DS,215 |
| Certification: | CE, GCF, ROHS |
| Place of Origin: | China |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | T/T, Western Union, |
| Supply Ability: | 1000pcs per month |
| Delivery Time: | 3-5 working days after received the payment |
| Packaging Details: | Packed in original tray firstly ,then carton, at last Bubble bag for outer packing |
| Function: | Step-Up, Step-Down |
| Output Configuration: | Positive or Negative |
| Topology: | Buck, Boost |
| Output Type: | Adjustable |
| Number of Outputs: | 1 |
| Company Info. |
| TOP Electronic Industry Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
SI2304DS,215 N-Channel 20V 3.7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs
Features
TrenchMOS™ technology
Very fast switching
Subminiature surface mount package.
Applications
Battery management
High speed switch
Low power DC to DC converter.
Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology
Product availability: SI2304DS in SOT23.
INFORMATION
Category | ||
Mfr | ||
Series | ||
Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | |
Part Status | Obsolete | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 30 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 117mOhm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 2V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 830mW (Tc) | |
Operating Temperature | -65°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-236AB | |
Package / Case |
Drawing

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