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| Categories | SiC Substrate |
|---|---|
| Brand Name: | ZMSH |
| Model Number: | 4H 6inch SiC Epitaxial Wafer |
| Certification: | rohs |
| Place of Origin: | CHINA |
| MOQ: | 5 |
| Price: | by case |
| Payment Terms: | T/T |
| Delivery Time: | 2-4weeks |
| Packaging Details: | package in 100-grade cleaning room |
| Size: | 6 inch |
| Thickness: | 200-300 um |
| Material: | 4H-SiC |
| Conductivity Type: | N-type (doped with Nitrogen) |
| Resistivity: | ANY |
| TTV: | ≤ 10 µm |
| BOW/Warp: | ≤ 20 µm |
| Packaging: | vacuum sealed |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device
The 4H-SiC epitaxial wafer is a core material for carbon disulfide (SiC) power devices, fabricated on a 4H-SiC single-crystal substrate via chemical vapor deposition (CVD). Its unique crystal structure and electrical characteristics make it an ideal substrate for ultra-high voltage (UHV, >10 kV) metal-oxide-semiconductor field-effect transistors (MOSFETs), junction barrier Schottky diodes (JBS), and other power devices. This product offers three epitaxial layer thicknesses (100μm, 200μm, 300μm) to address applications ranging from low-voltage to UHV scenarios, suitable for new energy vehicles (NEVs), industrial power systems, and smart grid technologies.
1. High Breakdown Voltage & Low On-Resistance
2. Exceptional Thermal Stability & Reliability
3. Low Defect Density & High Uniformity
4. Compatibility with Advanced Fabrication Processes
1.Ultra-High Voltage Power Devices
2.Smart Grids & Energy Storage
3.Rail Transit & Aerospace
4.Research & High-Tech Manufacturing
| Parameter | Specification / Value |
| Size | 6 inch |
| Material | 4H-SiC |
| Conductivity Type | N-type (doped with Nitrogen) |
| Resistivity | ANY |
| Off-Axis Angle | 4°±0.5° off (typically toward [11-20] direction) |
| Crystal Orientation | (0001) Si-face |
| Thickness | 200-300 um |
| Surface Finish Front | CMP polished (epi-ready) |
| Surface Finish Back | lapped or polished (fastest option) |
| TTV | ≤ 10 µm |
| BOW/Warp | ≤ 20 µm |
| Packaging | vacuum sealed |
| QTY | 5 pcs |
*We accept customized one, please feel free to contact us about your requirements.
1. Q: What is the typical thickness range for 6-inch 4H-SiC epitaxial wafers?
A: The typical thickness ranges from 100–500 μm to support ultra-high-voltage (≥10 kV) MOSFET applications, balancing breakdown voltage and thermal management.
2. Q: What industries use 6-inch 4H-SiC epitaxial wafers?
A: They are critical for smart grids, EV inverters, industrial power systems, and aerospace, enabling high efficiency and reliability in extreme conditions.
Tags: #6inch, #Custom, #4H-SiC Epitaxial Wafer, #4H-N Type, #100μm/200μm/300μm, #Ultra-High Voltage (UHV), #MOS Device, #SiC Crystal, #Silicon Carbide Substrate, #100-500μm
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