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Sic Wafer For Uhv Mos Device

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sic wafer for uhv mos device

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​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

China ​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device on sale
SiC Epi Wafer Overview​ ​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device The 4H-SiC epitaxial wafer is a core material for carbon disulfide (SiC) power devices, fabricated on a 4H-SiC single-crystal substrate via chemical vapor deposition (CVD). Its unique crystal structure and electrical characteristics make it an ideal substrate for ultra-high voltage (UHV......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm

China SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm on sale
2inch 4/6inch dia50.6mm sic seed wafer 1mm thickness for ingot growth Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut ......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device on sale
... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it...
Shenzhen A.N.G Technology Co., Ltd

Address: Room421, Fuquan Bldg A, Qingquan Road, Longhua District, Shenzhen,China 518109
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