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| Categories | Scientific Lab Equipment |
|---|---|
| Brand Name: | ZMSH |
| Model Number: | SiC ingot growth furnace |
| Place of Origin: | China |
| MOQ: | 1 |
| Payment Terms: | T/T |
| Delivery Time: | 5-10months |
| purpose: | for 6 8 12inch SiC single crystal growth furnace |
| Dimensions (L × W × H): | Dimensions (L × W × H) |
| Pressure Range: | 1–700 mbar |
| Temperature Range: | 900–3000°C |
| Maximum Furnace Temperature: | 2500°C |
| Rotation Shaft Diameter: | 50 mm |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
Silicon carbide monocrystalline growth furnace resistance method 6 8 12inch SiC ingot growth furnace
ZMSH proudly introduces its SiC single crystal growth furnace, an advanced solution engineered for high-performance SiC wafer manufacturing. Our furnace efficiently produces SiC single crystals in 6-inch, 8-inch, and 12-inch sizes, meeting the growing needs of industries such as electric vehicles (EVs), renewable energy, and high-power electronics.
| Specification | Details |
|---|---|
| Dimensions (L × W × H) | 2500 × 2400 × 3456 mm or customize |
| Crucible Diameter | 900 mm |
| Ultimate Vacuum Pressure | 6 × 10⁻⁴ Pa (after 1.5h of vacuum) |
| Leakage Rate | ≤5 Pa/12h (bake-out) |
| Rotation Shaft Diameter | 50 mm |
| Rotation Speed | 0.5–5 rpm |
| Heating Method | Electric resistance heating |
| Maximum Furnace Temperature | 2500°C |
| Heating Power | 40 kW × 2 × 20 kW |
| Temperature Measurement | Dual-color infrared pyrometer |
| Temperature Range | 900–3000°C |
| Temperature Accuracy | ±1°C |
| Pressure Range | 1–700 mbar |
| Pressure Control Accuracy | 1–10 mbar: ±0.5% F.S; 10–100 mbar: ±0.5% F.S; 100–700 mbar: ±0.5% F.S |
| Operation Type | Bottom loading, manual/automatic safety options |
| Optional Features | Dual temperature measurement, multiple heating zones |
The core strength of our SiC single crystal growth furnace lies in its ability to consistently produce high-quality, defect-free SiC crystals. With precision temperature control, advanced vacuum management, and cutting-edge resistance heating technology, we ensure flawless crystal growth with minimal defects. This perfection is crucial for semiconductor applications, where even slight imperfections can significantly impact the performance of the final device.
The SiC wafers grown in our furnace exceed industry standards for
both performance and reliability. The crystal structures exhibit
exceptional uniformity, low dislocation densities, and high
electrical conductivity, making them ideal for high-power,
high-frequency semiconductor devices. These qualities are essential
for next-generation power devices, including those used in electric
vehicles (EVs), renewable energy systems, and telecommunication
equipment.
| Inspection Category | Quality Parameters | Acceptance Criteria | Inspection Method |
|---|---|---|---|
| 1. Crystal Structure | Dislocation Density | ≤ 1 cm⁻² | Optical Microscopy / X-ray Diffraction |
| Crystalline Perfection | No visible defects or cracks | Visual Inspection / AFM (Atomic Force Microscopy) | |
| 2. Dimensions | Ingot Diameter | 6-inch, 8-inch, or 12-inch ±0.5mm | Caliper Measurement |
| Ingot Length | ±1mm | Ruler / Laser Measurement | |
| 3. Surface Quality | Surface Roughness | Ra ≤ 0.5 μm | Surface Profilometer |
| Surface Defects | No microcracks, pits, or scratches | Visual Inspection / Microscopic Examination | |
| 4. Electrical Properties | Resistivity | ≥ 10³ Ω·cm (typical for high-quality SiC) | Hall Effect Measurement |
| Carrier Mobility | > 100 cm²/V·s (for high-performance SiC) | Time-of-Flight (TOF) Measurement | |
| 5. Thermal Properties | Thermal Conductivity | ≥ 4.9 W/cm·K | Laser Flash Analysis |
| 6. Chemical Composition | Carbon Content | ≤ 1% (for optimal performance) | ICP-OES (Inductively Coupled Plasma Optical Emission Spectroscopy) |
| Oxygen Impurities | ≤ 0.5% | Secondary Ion Mass Spectrometry (SIMS) | |
| 7. Pressure Resistance | Mechanical Strength | Must withstand stress tests without fracture | Compression Test / Bending Test |
| 8. Uniformity | Crystallization Uniformity | ≤ 5% variation across ingot | X-ray Mapping / SEM (Scanning Electron Microscopy) |
| 9. Ingot Homogeneity | Micropore Density | ≤ 1% per unit volume | Microscopy / Optical Scanning |
Q: What is the crystal growth of silicon carbide?
A: Silicon carbide (SiC) crystal growth involves creating
high-quality SiC crystals through processes like Czochralski or
Physical Vapor Transport (PVT), essential for power semiconductor
devices.
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