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Mosfet Tube FDMC8882 High Performance Low On Resistance Fast Switching Speeds

Categories MOSFET Power Electronics
Brand Name: onsemi
Model Number: FDMC8882
Place of Origin: Multi-origin
MOQ: 1
Price: Negotiable
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 999999
Delivery Time: 1-7days
Packaging Details: Standard
Product Type: MOSFET Power Electronics
Manufacturer: onsemi
Manufacturer Product Number: FDMC8882
Description: MOSFET N-CH 30V 10.5A/16A 8MLP
Manufacturer Standard Lead Time: 1-7days
Detailed Description: N-Channel 30 V 10.5A (Ta), 16A (Tc) 2.3W (Ta), 18W (Tc) Surface Mount 8-MLP (3.3x3.3)
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Mosfet Tube FDMC8882 High Performance Low On Resistance Fast Switching Speeds

FDMC8882 MOSFET Power Electronics


The FDMC8882 is a high performance and versatile power MOSFET device from Fairchild Semiconductor. With a breakdown voltage of 60V, this device is ideal for use in high voltage applications such as automotive, industrial and medical. It features a low on-resistance of 0.045 Ω, fast switching speeds and low capacitances. This device also offers low gate charge, thereby minimizing switching losses.


Features:


• Breakdown Voltage: 60V
• On-Resistance: 0.045 Ω
• Low Gate Charge
• Low Capacitances
• Fast Switching Speeds
• High Performance
• Versatile
• Ideal for Automotive, Industrial and Medical Applications


Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
14.3mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
945 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.3W (Ta), 18W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
8-MLP (3.3x3.3)
Package / Case
Base Product Number

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