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| Categories | MOSFET Power Electronics | 
|---|---|
| Brand Name: | Infineon | 
| Model Number: | BSC011N03LSATMA1 | 
| Place of Origin: | original | 
| MOQ: | 1 | 
| Price: | Negotiable | 
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram | 
| Supply Ability: | 999999 | 
| Delivery Time: | 1-3 days | 
| Packaging Details: | standard | 
| FET Type: | N-Channel | 
| Technology: | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss): | 30 V | 
| Current - Continuous Drain (Id) @ 25°C: | 37A (Ta), 100A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V | 
| Rds On (Max) @ Id, Vgs: | 1.1mOhm @ 30A, 10V | 
BSC011N03LSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 30V
FET Type  | ||
Technology  | MOSFET (Metal Oxide)  | |
Drain to Source Voltage (Vdss)  | ||
Current - Continuous Drain (Id) @ 25°C  | ||
Drive Voltage (Max Rds On, Min Rds On)  | 4.5V, 10V  | |
Rds On (Max) @ Id, Vgs  | 1.1mOhm @ 30A, 10V  | |
Vgs(th) (Max) @ Id  | 2.2V @ 250µA  | |
Gate Charge (Qg) (Max) @ Vgs  | 72 nC @ 10 V  | |
Vgs (Max)  | ±20V  | |
Input Capacitance (Ciss) (Max) @ Vds  | 4700 pF @ 15 V  | |
FET Feature  | -  | |
Power Dissipation (Max)  | 2.5W (Ta), 96W (Tc)  | |
Operating Temperature  | -55°C ~ 150°C (TJ)  | |
Mounting Type  | ||
Supplier Device Package  | PG-TDSON-8-1  | |
Package / Case  | 
Features
•Optimizedforhighperformancebuckconverter
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21

                                 
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