static random access memory 32mb

Brand Name:Infineon Technologies

Model Number:CY7C1079DV33-12BAXI

Place of Origin:Germany

...Memory Storage capacity: 32 Mbit Organization: 4M x 8 Access time: 12 ns Interface Type: Parallel Supply Voltage - Max: 3.3 V Supply voltage - Min: 3 V Supply Current—Maximum: ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:AS6C1616C-45TINTR

Memory IC Chip AS6C1616C-45TINTR 16Mb Low Power CMOS Static Random Access Memory [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Place of Origin:Malaysia

Brand Name:MOTOROLA

Model Number:MCM6246WJ20

...Static Random Access Memory . Part NO: MCM6246WJ20 Brand: 　MOTOROLA Mounting Type: Surface Mount Date Code: 03+ Quality Warranty: 3 Months Application: COMPUTER Over View The Northbridge typically handles communications among the CPU, in some cases RAM, and PCI Express (or AGP) video cards, and the Sourthbridge. Some Northbridges also contain integrated video controllers, also known as a Graphics and Memory

Place of Origin:Guangdong, China

Brand Name:Original

Model Number:CY62256LL-70SNC

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Brand Name:Original

Model Number:AS4C32M16SC-7TIN

Place of Origin:Original

AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage Features •Fast clock rate: 133 MHz • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - BurstLength:1,2,4,8,or fullpage - ...

Brand Name:Easyweigh

Model Number:FXR-4017K100

Place of Origin:China

Fully Automatic AC220V Food X Ray Machines Ferromagnetic Random Access Memory Hot Sale Ferromagnetic Random Access Memory Food X-Ray Inspection And Detection Machine X-ray Sundries Screening Machine X-ray Inspection System for Packaged Goods & Unpackaged ...

Brand Name:SKHYNIX

Model Number:H9HCNNNBPUMLHR- NMO

Place of Origin:KOREA

... NMO Four generations of low power double data rate synchronous dynamic random access memory Product Usage LPDDR is arguably the most widely used "working memory" memory for mobile devices worldwide. Low Power Double Data Rate SDRAM, a type of DDR...

Brand Name:MICRON

Model Number:MT53D512M32D2DS-053 AIT:D

Place of Origin:Shenzhen,China

MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic random access memory Product description Part number MT53D512M32D2DS-053 AIT:D is manufactured by MICRON Company and distributed by AYE. As one of the leading distributors of electronic products...

Place of Origin:original

Brand Name:original

Model Number:W9825G6KH-6

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Model Number:32G 16G 8G

Place of Origin:China

RAM DDR4 4G 8G 16G 32G ECC 2133 2400 2666 Mhz Random Access Server Memory Certifications Beijing Guangtian Runze Technology Co., Ltd. was established in March 2012, with a registered capital of 20 million yuan. Mainly engaged in the ...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C34098A-10JIN

...Static Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access...

Brand Name:Anterwell

Model Number:A623308M-70SF

Place of Origin:original factory

...: Operating: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three

Brand Name:CYPRESS

Model Number:FM16W08-SGTR

Place of Origin:Multi-origin

... Static Random Access Memory (SRAM) in space-saving 8-pin plastic SOP package with an access time of 15ns. Features: • Low power consumption • Wide voltage range: 1.8V to 3.6V • High performance: 15ns access time • Low cost • 1Mbit capacity...

Brand Name:Anterwell

Model Number:A623308M-70SF

Place of Origin:original factory

...: Operating: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three

Brand Name:Micron Technology Inc.

Model Number:JS28F320J3F75A

Place of Origin:CHINA

... FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 75ns 56-TSOP Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 32Mb (4M x 8, 2M x 16) Write Cycle Time - Word, Page 75ns Access Time 75ns Memory Interface Parallel...

Brand Name:CYPRESS

Model Number:FM24CL04B

Place of Origin:Original Factory

... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ...

Brand Name:Hynix

Model Number:Hynix Memory IC

Place of Origin:South Korea, China

...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ...

Brand Name:original

Model Number:FM1608-120

Place of Origin:Original Factory

... - 64KB BYTEWIDE FRAM MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in ...

Brand Name:Infineon

Model Number:FM24CL64B-GTR

Place of Origin:China

...GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp & 8-lead TSSOP Features ■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8 ❐ High-endurance 100 trillion...

Model Number:FM24W256-G

Brand Name:Original

Place of Origin:US

...memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories...