stable mosfet with low threshold voltage

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Voltage MOSFET Trench Process Wireless Charging High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas...

Brand Name:IXYS

Model Number:IXTQ130N10T

Place of Origin:original

...: TO-247 Product Description: The IXYS IXTQ130N10T is an N-channel MOSFET with a max drain source voltage of 100V and a max drain current of 130A. This device offers a low RDS(on) of 0.01 Ohm and is housed in a TO-247 package. It is designed for use in

Brand Name:ONSEMI

Model Number:BSS138LT1G

Place of Origin:Original

... and cordless telephones. Features • Pb−Free Packages are Available • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space NOTES: 1. DIMENSIONING AND

Brand Name:ONSEMI

Model Number:BSS138LT1G

Place of Origin:China

...MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R The ON Semiconductor MOSFET is an N channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C. Features and Benefits: • Low Threshold Voltage (VGS(th): 0.85 V-1.5 V) Makes it Ideal for Low

Brand Name:JEUNKEI

Model Number:JY213H

Place of Origin:China

...MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage process and common-mode noise canceling technique provide stable

Brand Name:Ti

Model Number:CSD13381F4

CSD13381F4 Mosfet Power Transistor MOSFET 12V N-CH Pwr MOSFET 1 Features Low On-Resistance Low Qg and Qgd Low Threshold Voltage Ultra-Small Footprint (0402 Case Size) – 1.0mm×0.6mm Ultra-Low Profile – 0.35 mm Height Integrated ESD Protection Diode...

Brand Name:Diodes Incorporated

Model Number:ZXMP7A17KTC

Place of Origin:China

...resistance andbull; Fast switching speed andbull; Low threshold andbull; Low gate drive andbull; DPAK package andnbsp; Applications andbull; DC-DC converters andbull; Power management functions ...

Brand Name:JUYI

Place of Origin:China

...MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage

Brand Name:original

Model Number:LN2306LT1G

...MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LN2306LT1G Products Description: 1. Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R 2. Diodes and Rectifiers N-channel 30V 5.8A 3. High Density Cell Design For Ultra Low On-Resistance 4 Advanced trench process technology 30V N-Channel Enhancement-Mode MOSFET Technological Parameters: Drain-source resistance 0.038 Ω polarity N threshold voltage 0.7 V Drain-Source Voltage...

Brand Name:Toshiba

Model Number:TPH2R306NH1,LQ

Place of Origin:Original

... Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. They feature low on-resistance with proprietary technology using a Cu connector. They have a narrowed gate threshold voltage range of 2.5V to 3.5V,

Brand Name:Microchip

Model Number:Onsemi

...MOSFET with a maximum drain current of 11A and a low on-state resistance of 0.109 ohms. Specification: Maximum Voltage Rating: 900V Maximum Drain Current: 11A On-State Resistance: 0.109 ohms Gate Threshold Voltage: 4V (typical) Features: High voltage capability Low...

Brand Name:original

Model Number:DMN5L06DWK7

Place of Origin:original

... Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected up to 2kV  Totally Lead-Free & Fully ...

Brand Name:INFINEON

Model Number:IRF540NSTRLPBF

Place of Origin:Germany

...MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate source threshold voltage: 4V @ 250uA Leakage source on resistance: 44 MQ2@16A,10V Maximum power dissipation: 130W Feature Advanced Process Technology Ultra Low...

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no

Brand Name:JONE

Model Number:MMA-315M

Place of Origin:GUANGDONG,CHINA

... welding performance with minimal spatter. 3. All kinds of acid, alkalic electrodes are applicable. 4. Electronic reactor control, stable welding process, small spatter, deep pool and good forming. Description This item can be used in the automotive and

Brand Name:EXLENTECH

Model Number:ARC-200

Place of Origin:CHINA

...: 1. Traditional Mosfet inverter technology, low consumption and high output. 2. Digital control improves the reliability. 3. High speed fan brings effective dissipation and high duty cycle. 4. Over-current, over-voltage and over-heat protection. 5.

Brand Name:INFINEON

Model Number:IPD100N04S402ATMA1

Place of Origin:original

...MOSFET transistor commonly used in fields such as DC power switches, motor control, lighting control, and electronic transformers. Conclusion: IPD100N04S402ATMA1 has the characteristics of low conduction resistance, high switching speed, low threshold voltage, and high temperature working ability, which can improve system efficiency and reliability. Parameters: Drain Source Voltage...

Categories:Onsemi Ic

Country/Region:china

...Voltage: 25V Drain Continuous Current: 50A On-Resistance: 8.5 mΩ (max) Gate Threshold Voltage: 2-4V Package: IGBT6/TO247AC The FSB50825AB is an N-Channel Power MOSFET from ON Semiconductor. Key Features: High continuous drain current rating of 50A 25V breakdown voltage for low voltage applications Extremely low...

Brand Name:Texas Instruments

Model Number:TPS2330IPWR

Place of Origin:CHINA

...MOSFET Driver •Input Voltage: 3 V to 13 V •Output dV/dt Control Limits Inrush Current •Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer •Power-Good Reporting With Transient Filter •CMOS- and TTL-Compatible Enable Input •Low 5-�...

Brand Name:Diodes Incorporated

Model Number:2N7002-7-F

Place of Origin:USA

...MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Motor Control  Power Management Functions Features  Low On-Resistance  Low Gate Threshold Voltage  Low...