sq201 rf power vdmos transistor

Categories:RF Transistors

Country/Region:china

SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source Breakdown ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF15060S

Quick Detail: MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS Description: Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ...

Brand Name:Analog Devices Inc.

Model Number:AD8361ARMZ-REEL7

Place of Origin:Multi-origin

...: Reel Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ...

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Brand Name:SANYO

Model Number:2SD1625

Place of Origin:Philippines

Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon Transistors IC Applications Motor drivers, printer hammer drivers, relay dreiver,voltage regulator control Features High ...

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...

Brand Name:Mitsubishi

Model Number:M68702H

Place of Origin:JP

M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND SS513AT HONEYWELL 　 ...

Brand Name:ONSEMI

Model Number:MMBTA43LT1G

Place of Origin:Original

MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) 3,...

Place of Origin:CN

Brand Name:Original Factory

Model Number:A5G35S004NT6

Wireless Communication Module A5G35S004NT6 48V 24.5 dBm Airfast RF Power GaN Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Brand Name:ST

Model Number:STPS15L30C-TR STS1DNC45 STV6419AG

Place of Origin:Original

Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate ...

Model Number:MBRF30100CT

Place of Origin:United States

Brand Name:Original

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Model Number:VRF2933

Place of Origin:Malaysia

Brand Name:KAIGENG

VRF2933 N/A Electronic Components IC MCU Microcontroller Integrated Circuits VRF2933w #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width...

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor...

Brand Name:NXP Semiconductors

Model Number:AFT05MS003NT1

...Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacturer: NXP Product Category: RF MOSFET Transistors Transistor...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:TeXin

Model Number:TX-50W

Place of Origin:Shenzhen China

.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects.

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Brand Name:OEM

Place of Origin:China

... RF Power Amplifier Detect Module for Anti Drone System Autel Mavic 3 Counter Fpv C-Uas Djis Countermeasure Product Parameters GaN transistors are more efficient. The efficiency minus the driver (heating power consumption) is about 55-65%. In fact, the...

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Brand Name:LDSK

Place of Origin:Guangdong, China

How to contact us? Email: chrissy@ladaskytech.com Phone/wechat/whatsapp: +86 13556865442 Product Parameters GaN enables high efficiency and high output. The radio frequency and monitoring technical indicators of the power amplifier module stipulate the ...