rds on mosfet

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low RDS...

Place of Origin:CN

Brand Name:Original Factory

Model Number:FTCO3V455A2

Automotive IGBT Modules FTCO3V455A2 40V 150A Low Rds Automotive MOSFET Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Brand Name:Infineon Technologies

Model Number:BSC054N04NSG

Place of Origin:original

...MOSFET Power Electronics High Performance and Reliable Solutions Product Name: BSC054N04NSG N-Channel MOSFET Function: This N-Channel MOSFET is a high density, low RDS(on) MOSFET ideal for switching applications. Package: SOT-23 Drain-Source Voltage (VDS): 40V Gate-Source Voltage (VGS): ±20V Continuous Drain Current (ID): -0.54A Drain-Source On-Resistance (RDS...

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:20G04S

...MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS =40V,ID =20A RDS(ON) < 35mΩ @ VGS=10V RDS(ON) < 42mΩ @ VGS=4.5V P-Channel VDS =-40V,ID = -18A RDS(ON) <40mΩ @ VGS=-10V RDS...

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

...MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS...

Model Number:NP110N055PUG

Place of Origin:US

Brand Name:Original

...) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.4 mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (...

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

...applications requiring efficient switching and thermal performance. Product Overview The Infineon IRF7342TRPBF is an N-channel enhancement-mode MOSFET utilizing advanced trench gate technology. Designed for power management applications, it delivers low on

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4....

Brand Name:Toshiba

Model Number:SSM3K361R,LF

Place of Origin:China

...MOSFET with Ultra-Low 40mandOmega; RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs andnbsp; Featuresandnbsp; AEC-Q101 qualified (Please see the orderable part number list) 175℃ MOSFET 4.5 V drive Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS...

Brand Name:Huixin

Model Number:BSS138

Place of Origin:China

SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct ...

Brand Name:STMicroelectronics

Model Number:STW9N150

... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1500 V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 4A, 10V Vgs(th) (Max) @ Id 5V @ 250µA

Brand Name:Toshiba Semiconductor

Model Number:SSM3K36MFV

Place of Origin:CHINA

... Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 5V Rds On (Max)

Brand Name:Original

Model Number:IRLML2244TRPBF

Place of Origin:Original

MOSFET IRLML2244TRPBF Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET P-CH 20V 4.3A SOT23 PRODUCT PROPERTIES Mfr Infineon Technologies Series HEXFET Product Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds...

Brand Name:CANYI

Model Number:AO3400

Place of Origin:Guangdong, China

...mosfet power transistor NPN MOSFET A09T n channel transistor Features: Model Number:AO3400 Type:MOSFET Package Type:Surface Mount Product Name:AO3400 Other name:AO3400A Marking:A09T FET Type:N-Channel Drain to Source Voltage (Vdss):30V Current - Continuous Drain (Id) 25°C5.8A (Ta) Drive Voltage (Max Rds On, Min Rds...

Brand Name:onsemi

Model Number:FDC608PZ

Place of Origin:USA

...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A Rds On - Drain-Source Resistance: 30 mOhms Vgs - Gate-Source Voltage: - 12 V, + 12 V Vgs th - Gate-Source ...

Brand Name:Original Factory

Model Number:BSC004NE2LS5ATMA1

Place of Origin:China

...Circuits Chip N Channel Power MOSFET Product Description Benchmark switching performance (minimum quality factor RDS(on) x Qg and RDS(on) x Qgd) Specific components optimized for toroidal circuits to provide low RDS(on) Parts with integrated Schottky ...

Brand Name:Fairchild

Model Number:FDC86244

Place of Origin:Shenzhen, China

... Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Features : „1) Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A 2) „Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A 3) „High performance trench technology for