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Fets Mosfets With High Power

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fets mosfets with high power

All fets mosfets with high power wholesalers & fets mosfets with high power manufacturers come from members. We doesn't provide fets mosfets with high power products or service, please contact them directly and verify their companies info carefully.

Total 123 products from fets mosfets with high power Manufactures & Suppliers
China RC Hobby Mosfet Waterproof High Power ESC 22S 400A 100V With 12 Months Warranty factory

Brand Name:BigFlier

Model Number:F-22S-400A-B

Place of Origin:ShenZhen

RC Hobby Mosfet Waterproof High Power ESC 22S 400A With 12 Months Warranty Basic information: Voltage Current Size(mm) weight(g) BEC (Volts/Amps) Box Programming support Computer Programming support Firmware update 3-22S 400A 120*64*38mm 700g OPTO Yes Yes ...

Shenzhen Flier Electronic Co., Ltd.
Active Member

Guangdong

China Power Mosfet IPD60R2K1CEAUMA1 High Power Low On Resistance Power Switching factory

Brand Name:Infineon Technologies

Model Number:IPD60R2K1CEAUMA1

Place of Origin:Multi-origin

IPD60R2K1CEAUMA1 MOSFET Power Electronics Product Description: The IPD60R2K1CEAUMA1 is a N-channel Power MOSFET, optimized for power switching applications. This device is designed using advanced Trench MOSFET technology for excellent RDS(ON) and low gate ...

Shenzhen Sai Collie Technology Co., Ltd.
Verified Supplier

China MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD factory

Brand Name:ONSEMI

Model Number:MMBT4401LT1G

Place of Origin:Original

MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBT4401LT1 SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT4401LT1G (Pb−Free) 3,000 / Tape & ...

ChongMing Group (HK) Int'l Co., Ltd
Active Member

China 600V 105 MOhm Typ. 26A N Channel Power Mosfet , Single High Power Transistor factory

Brand Name:Original brand

Model Number:STO33N60M6

Place of Origin:Original

Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet Power...

Shenzhen Weitaixu Capacitor Co.,Ltd
Active Member

Guangdong

China WSP4012 P/N Channel Mosfet Transistor , High Power Transistor For Load Switch factory

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:WSP4012

QM4803D​ N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gatecharge for most of the synchronous buck converter applications . The ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Active Member

Guangdong

China P4NK60ZFP Power Mosfet Transistor high power mosfet transistors factory

Brand Name:Anterwell

Model Number:P4NK60ZFP

Place of Origin:original factory

Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package MAX191BCWG+ 2338 MAXIM 16+ SOIC-24 MAX1932ETC+T 3044 MAXIM 13+ QFN MAX232EIDR 50000 TI 13+ SOP-16 MAX232IDW 9003 TI 11+ SOP-16 MAX253CSA+ 6562 MAXIM 14+ SOP-8 MAX3051EKA+T 3853 MAXIM 14+ SOT-23 ...

Anterwell Technology Ltd.
Site Member

Guangdong

China MOSFET The Ultimate High Power Efficiency Breakthrough factory

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... MOSFET is engineered to deliver exceptional power output while maintaining high efficiency levels, making it an ideal choice for demanding industrial and commercial applications. With its high voltage fet capabilities, this High Power MOSFET is capable of

Reasunos Semiconductor Technology Co., Ltd.
Verified Supplier

Guangdong

China High Power MOSFET SSN1N45B
 Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92
 factory

Place of Origin:China

Brand Name:ONSEMI

Model Number:SSN1N45B

High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Sunbeam Electronics (Hong Kong) Limited
Active Member

China 17a 55v 45w High Power Transistor Surface Mount IRFR024NTRPBF D Pak N Channel factory

Brand Name:Original brand

Model Number:IRFR024NTRPBF

Place of Origin:Original Factory

...HIGH POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status / RoHS Status: Lead Free / RoHS Compliant High Light: high power mosfet transistors , n channel mosfet...

Shenzhen Huahao Gaosheng Technology Co., Ltd
Active Member

China NTTFS3A08PZTAG Transistor IC Chip FETs Single P Channel Power Mosfet 20V 9A 8WDFN factory

Brand Name:ON

Model Number:NTTFS3A08PZTAG

Place of Origin:America

...FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel power...

Shenzhen Res Electronics Limited
Verified Supplier

Guangdong

China FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance factory

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Shenzhen Koben Electronics Co., Ltd.
Site Member

Guangdong

China IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3 factory

Brand Name:Infineon Technologies

Model Number:IPP65R110CFDA

Place of Origin:United States

IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3 Features:IPP65R110CFDA Category Single FETs, MOSFETs Mfr Infineon Technologies Series Automotive, AEC-Q101, CoolMOS Product Status Active FET Type N-Channel Technology MOSFET (...

Shenzhen Zhaocun Electronics Co., Ltd.
Active Member

China Integrated Circuit Chip MSC017SMA120S Single FETs MOSFETs Transistors TO-268-3 factory

Brand Name:Original Factory

Model Number:MSC017SMA120S

Place of Origin:CN

Integrated Circuit Chip MSC017SMA120S Single FETs MOSFETs Transistors TO-268-3​ Product Description Of MSC017SMA120S MSC017SMA120S is a 1200 V, 17 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-268 (D3PAK) package, Surface Mount. Specification Of ...

ShenZhen Mingjiada Electronics Co.,Ltd.
Verified Supplier

China BUK7C10-75AITE,118 Field Effect Transistor Transistors FETs MOSFETs Single factory

Place of Origin:Original

...FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 121nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V Vgs (Max) ±20V FET Feature Current Sensing Power...

KZ TECHNOLOGY (HONGKONG) LIMITED
Active Member

China Through Hole High Power Transistor , AOTF14N50 N Channel Mosfet N-CH 500V 14A TO220F factory

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Verified Supplier

Guangdong

China IGBT Power Module MGF0906B - TOSHIBA - < High-power GaAs FET (small signal gain stage)> factory

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MGF0906B

...  High output power P1dB=37.0dBm(TYP.) @f=2.3GHz  High power gain GLP=11.0dB(TYP.) @f=2.3GHz  High power added efficiency P.A.E =40%(TYP.) @f=2.3GHz,P1dB  Hermetically sealed metal-ceramic package with ceramic lid Specifications: part no

Mega Source Elec.Limited
Verified Supplier

China F16N65L TO-220F-3L N-CHANNEL High Power MOSFET 16A 650V Applications In Switching Power Supplies And Adaptors factory

Brand Name:HT

Model Number:F16N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Shenzhen Hunt Electronics Co., Ltd
Active Member

Guangdong

China NCS20074DTBR2G High-Speed Dual MOSFET Driver For Power MOSFETs And IGBTs factory

Brand Name:ON Semiconductor

Model Number:NCS20074DTBR2G

... two N-channel MOSFETs or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to 18V) make it ideal for high-frequency switching applications. Applications: DC-DC Converters, Motor Drives,

rongxing international trade co.,limited
Active Member

China High Side BLDC Motor Driver MOSFET Enhancement Mode Power For Power Switching factory

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

...Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power...

Shanghai Juyi Electronic Technology Development Co., Ltd
Verified Supplier

Shanghai

China TK35N65W High Power Transistor 35A 650V factory

Brand Name:TOSHIBA

Model Number:TK35N65W

Place of Origin:Original Factory

...-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages.

Shenzhen Retechip Electronics Co., Ltd
Verified Supplier

Guangdong

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