discrete semiconductor devices p channel

Brand Name:onsemi

Model Number:3LP01SS-TL-H

Place of Origin:China

3LP01SS-TL-H Discrete Semiconductor Products P-Channel 30 V 100mA (Ta) 150mW (Ta) Surface Mount SMCP PRODUCT DESCRIPTION Part number 3LP01SS-TL-H is manufactured by onsemi and distributed by Stjk. As one of the leading distributors of electronic products...

Brand Name:Vishay Semiconductor

Model Number:SIHF10N40D-E3

... N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 Automotive No PPAP No Product Category Power MOSFET Configuration Single Channel Mode Enhancement Channel Type...

Model Number:RB168MM150TFTR

Place of Origin:China

Electronic Components RB168MM150TFTR In Stock Find information here in stock.xlsx Product Attributes TYPE DESCRIPTION Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes Mfr Rohm Semiconductor Series Automotive, AEC-Q101 Package Tape...

Brand Name:Infineon Technologies

Model Number:BSS138NH6327

Place of Origin:CN/MY/MX

... switching, in an electronic circuit. Some common examples of Discrete Semiconductor Products include diodes, transistors, and thyristors. Discrete Semiconductor Products common features include: - Maximum voltage and current ratings: This refers to the

Brand Name:Littelfuse

Model Number:AQRV05-4HTG

Place of Origin:USA

... pin against ESD and high surge events. This robust device can absorb maximum 12A surge current per IEC 61000-4-5 (tP=8/20μs) without performance degradation and a minimum ±30kV ESD per IEC ...

Brand Name:AOS

Model Number:AO4421

Place of Origin:original

AO4421 MOSFET Power Electronics Discrete Semiconductor Transistors P-Channel 60V Surface Mount Package 8-SOIC FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 6.2A (Ta) Drive ...

Brand Name:STMicroelectronics

Model Number:STP110N8F6

...y low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very

Brand Name:Original

Model Number:IRFB3077PBF

Place of Origin:Original

IRFB3077PBF Integrated Circuit IC Chips Electronic Components IC MOSFET PRODUCT DESCRIPTION Part number # IRFB3077PBF is manufactured by Infineon Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we carry...

Brand Name:MOLEX

Model Number:2137192081

Place of Origin:USA

...Discrete Semiconductor is one of the most popular electronic components for a variety of applications. It includes a wide range of products, such as rectifiers, diodes, SC-63 and SMA transistors, MOSFETs and other devices. These devices can be used in electrical power systems, automotive, consumer electronics, industrial and medical applications. Discrete Semiconductor...

Model Number:SLIMDIP-S

... Minimum Operating Temperature - 30 C Maximum Operating Temperature + 115 C Configuration 6-Pack Transistor Polarity N and P-Channel Id - Continuous Drain Current 3.1 mA Operating Supply Voltage 300 V Subcategory Discrete Semiconductor Modules < DIPIPM >

Brand Name:STMicroelectronics

Model Number:TIP35C TIP41C TIP42C TIP122 TIP127 TIP142P

Place of Origin:CHINA

...TIP42C TIP122 TIP127 TIP142P Complementary NPN - PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors...

Brand Name:Original Factory

Model Number:MSCSM70AM10CT3AG

Place of Origin:CN

...Discrete Semiconductor Modules 700V 241A 690W Chassis Mount SP3F Product Description Of MSCSM70AM10CT3AG The MSCSM70AM10CT3AG device is a phase leg 700 V/241 A full silicon carbide (SiC) power module. Product Attributes Of MSCSM70AM10CT3AG Part Number MSCSM70AM10CT3AG Technology Silicon Carbide (SiC) Configuration 2 N Channel...

Model Number:HM10N10K

Place of Origin:Guangdong, China

Brand Name:KAIGENG

HM10N10K TO-252 Electronic Components Diodes Engine Spot MOS FET N-Channel New Original HM10N10K #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border...

Brand Name:original

Model Number:TK30E06N1,S1X

Place of Origin:original

...Discrete Semiconductors Transistors MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel

Brand Name:null

Model Number:null

Place of Origin:null

...Semiconductor discrete devices are widely used in consumer electronics, industrial electronics, computers, network communications, LED displays and other fields. With the development of automotive electronics towards intelligence, informatization and networking, and the explosive growth of new energy vehicles, the application of semiconductor discrete devices...

Brand Name:XUYANG

Model Number:K200

Place of Origin:China

... current trigger device,itcanconduct high surge current/pulse current. Feature: 1. Plastic package has Underwriters Laboratory Flammability Classification 94V-0 2. High ...

Model Number:C3100N65X122

...Semiconductors - 2018 Catalog This catalog provides an overview of Infineon's power semiconductor offerings for industrial and consumer applications, as detailed in the 2018 edition. It covers a wide range of technologies including IGBT modules, discrete IGBTs and diodes, Silicon Carbide (SiC) devices...

Model Number:2N7002

库存2N7002DW K27 72K 2N7002 7002 SOT363贴片晶体管2n 7002 702/7002 SOT-23 2n 7002 lt 2n 7002 7002N沟道MOSFET 2N7000 / 2N7002 / NDS7002AN-Channel Enhancement Mode Field Effect Transistor Features • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small ...

Model Number:FCH47N60F

Place of Origin:Guangdong, China

Brand Name:Original

... needs? Look no further than the SuperFET FCH47N6 from onsemi. Designed with cutting-edge MOSFET (Metal Oxide) technology, this N-Channel transistor delivers an impressive drain to source voltage of 600 V and a continuous drain current of 47A at

Brand Name:Schneider

Model Number:140DAI54000

Place of Origin:France

Schneider 140DAI54000 VAC Discrete Input Modules 115 V AC 16 Channels More information: Part Number: 140DAI54000 Manufacturer: Schneider Electric Type: I/O Modules Model #: 140-DAI-540-00 Warranty: 2 Years Module Format: Standard Product Range: Modicon ...