2n5485 rf amplifier transistor

Model Number:PTC-H16

Brand Name:PTC

Place of Origin:China

... RF amplifier engineered to deliver powerful RF amplification across a wide 20 MHz to 500 MHz frequency range. With a typical saturated output power of 1000 W and a minimum power gain of 60 dB, this rack-mounted amplifier is built for demanding RF test...

Model Number:YP801041T

Place of Origin:Jiangsu, China

Brand Name:INNOTION

Product Overview Innotion's YP801041T is a 12-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain, and wide bandwidth capabilities, with frequency up to 9000 MHz. The ...

Model Number:XRF286S

Place of Origin:Malaysia

Brand Name:KAIGENG

XRF286S N/A Electronic Components IC MCU Microcontroller Integrated Circuits XRF286S #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRW53601

... specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers, microwave communication equipment,

Brand Name:Analog Devices Inc.

Model Number:HMC789ST89ETR

Place of Origin:Multi-origin

...RF Power Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers excellent gain and power performance, as well as low noise, which makes it ideal for use in both linear and power amplifier applications. Features: - High-performance, high-frequency, high-power transistor...

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Model Number:2SC2757 T33

...RF transistor is designed for low noise and high current-gain bandwidth product applications. It is suitable for use in VHF RF amplifiers, local oscillators, and mixers. The device features a compact SOT-23 package. Product Attributes Product Type: NPN RF Transistors...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:Original

Model Number:SZA5044Z

Place of Origin:Original

...Amplifiers RF Amplifier IRFHM9331TRPBF MSP430FR2100IPW16R Wireless RF Integrated Circuits Product Description RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier...

Brand Name:SWT

Model Number:SW-PA-600018000-51C

Place of Origin:China

...RF Amplifier System 6-18 GHz 120W High Power Ultra Wideband Power Amplifier Box for Test and Measurement Description The 6000-18000MHz 51dB 120W Ultra Wideband Power Amplifier Chassis is a high performance RF amplifier system designed for applications requiring high power output over a wide frequency range. The amplifier...

Brand Name:ON

Model Number:MMBF5484

Place of Origin:ON

...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain ...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Place of Origin:Guangdong, China

Brand Name:LDSK

Temperature and VSWR Protection 860-960Mhz 100W RF Amplifier Module for FPV Autel Dji Equipment Product Description Specification Frequency 860-960mhz Power supply 100W Saturated ...

Brand Name:TeXin

Model Number:TX-100W

Place of Origin:Shenzhen China

... is capable of enhancing signals for optimal performance in various RF systems. Equipped with a multistage amplification system, the RF Amplifier utilizes advanced voltage amplifier circuits to ensure clear and consistent signal amplification. This

Brand Name:WDS

Model Number:BiAMP RF

Place of Origin:China

...RF Amplifier BiAMP RF Power Amplifier Provides 40/20/10/5W,150M/230M/400M/600M/800M/900M/1.4G/2.3G/5GHz Linear/Unlinear RF Amplifier, Designed For Broadband/Narrowband Digital Data Link Applications. This Series of Amplifiers Adopts Silicon Based Potassium Nitride Power Amplifier, High Speed Automatic Tx/Rx Switching,High Efficiency RF...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Model Number:RAH

Place of Origin:China Mainland

Brand Name:Roviyno

... across AM, FM, VHF, and UHF bands, delivering output power from 0 dBm to over 50 dBm. Custom modules available upon request. We offers RF Power Amplifier Modules built on robust GaN technology with

Categories:RF Interconnects

Country/Region:china

...: 60 mA Gain: 24 dB NF - Noise Figure: 2.9 dB Type: Low Noise Amplifiers Mounting Style: SMD/SMT Package / Case: Y460 P1dB - Compression Point: 5 dBm OIP3 - Third Order Intercept: 14 ...

Place of Origin:China

Brand Name:OEM

...GaN RF Amplifier Module for Anti Drone System Fpv Defense System Product Parameters Place of Origin Guangdong, China Brand Name PADI FLY Place of Origin Guangdong, China Product Name RF power amplifier module(GaN) Frequency 400MHZ(420-450/430-460/428-...

Place of Origin:China

Product Description PNP General Purpose Amplifier Transistor Electronics Component Part Number: S9012 Major Parameter: type POLARITY PCM IC BVCBO BVCEO BVEBO hHE Ft Outline Min Max mW mA V V V MHz S9012 PNP 300 -500 -40 -25 -5 120 400 150 SOT-23 S9013 NPN ...