Programmable CAS 128M DDR3 Synchronous DRAM H5TC2G63GFR-PBA
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... Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock....
Shenzhen Hongxinwei Technology Co., Ltd
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MT48LC32M8A2 Programmable IC Chips Synchronous DRAM 256Mb x4 x8 x16 SDRAM
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... Features • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for ......
Anterwell Technology Ltd.
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MT41K256M8DA-107:K High-Performance 8GB DDR3 Synchronous DRAM Flash Memory Chips
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MT41K256M8DA-107:K High-Performance 8GB DDR3 Synchronous DRAM Flash Memory Chips MT41K256M8DA-107:K Flash Memory Chips Product Description: The MT41K256M8DA-107:K Flash Memory Chips is a high-performance memory designed for embedded applications. It offers......
Shenzhen Sai Collie Technology Co., Ltd.
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MT48LC32M8A2FB-75:D TR Programmable IC Chips Synchronous DRAM 256Mb x4 x8 x16 SDRAM
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... Features • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for ......
ChongMing Group (HK) Int'l Co., Ltd
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MT41J128M16HA-125 IT:D IC DRAM 2GBIT PARALLEL 96FBGA Micron Technology Inc.
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... clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS READ latency (CL) • Posted CAS additive latency (AL) • Programmable CAS WRITE latency (CWL)...
Sanhuang electronics (Hong Kong) Co., Limited
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DDR3 SDRAM Memory Chip IMD128M16R39CG8GNF-125
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DDR3 SDRAM Memory Chip IMD128M16R39CG8GNF-125 DDR3 SDRAM512M4 – 64 Meg x 4 x 8 Banks256M8 – 32 Meg x 8 x 8 Banks Features VDD = VDDQ = 1.5V ±0.075V 1.5V center-terminated push/pull I/O Differential bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on-die termination (ODT)for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS......
Shenzhen Filetti Technology Co., LTD
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MT41K128M16JT-125 AAT:K IC DRAM 2GBIT PARALLEL 96FBGA
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MT41K128M16JT-125 AAT:K Products Description: • VDD = VDDQ = 1.35V (1.283–1.45V) • Backward-compatible to VDD = VDDQ = 1.5V ±0.075V • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal ......
DINGCEN INTERNATIONAL (HK) LIMITED
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XA6SLX45T-2CSG324Q Spartan-6 Field Programmable Gate Array 324-LFBGA
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... targeting a single-chip DRAM (either DDR, DDR2, DDR3, or LPDDR), and supporting access rates of up to 800 Mb/s. Specification Of XA6SLX45T-2CSG324Q Part Number: XA6SLX45T-2CSG324Q Maximum Operating Frequency: ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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AS4C256M16D3LB-12BIN DRAM Chip DDR3 SDRAM 4Gbit 256M X 16 1.35V/1.5V 96-Pin FBGA
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Product Description: Programmable IC Chip Our Programmable IC Chip is a data acquisition IC with 8-100 pins that can be programmed from 2.7V to 5.5V. With a wide operating temperature range of -40C to +125C and ESD protection of 2KV HBM, this gate array IC......
STJK(HK) ELECTRONICS CO.,LIMITED
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BMW CAS AK300 AK300+ V1.5 Key Maker
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BMW CAS AK300 AK300+ V1.5 Key Maker BMW CAS AK300+ Key Maker Firmware Version: 1.16 Software Version:1.50 AK300+ Features: 1 BMW CAS supports a diagnosis of communication directly through the OBD port or through the CAN BUS port security to read and write ......
OBDII Auto Diagnostic Equipment Co., Ltd
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