20-500 MHz Broadband 1000W High Power RF Amplifier
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...RF amplifier engineered to deliver powerful RF amplification across a wide 20 MHz to 500 MHz frequency range. With a typical saturated output power of 1000 W and a minimum power gain of 60 dB, this rack-mounted amplifier is built for demanding RF test environments and specialized communication applications......
Pinnacle Technology Co., Limited
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Tabletop Bipolar RF Coblation Orthopedics Plasma Surgery System Probe For Precision Surgical Applications
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Product Overview This Orthopedic RF Plasma Electrode is a minimally invasive surgical probe specially engineered for orthopedic procedures. Adopting a porous sheet design, it features an enlarged contact surface to create a broader plasma surgical area, ......
DAMAI TECH CO.,LIMITED.
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MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS
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...RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications......
ChongMing Group (HK) Int'l Co., Ltd
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D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR P Channel Mosfet
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D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ......
Wisdtech Technology Co.,Limited
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6 Inch Sapphire Wafer – 150mm Single Crystal Al2O3 Substrate for Semiconductor & Optical Applications
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... strength, chemical stability, thermal resistance and optical performance, sapphire wafers are widely used as substrates for LED, GaN epitaxy, RF devices, optical components, sensors and advanced research applications. We...
SHANGHAI FAMOUS TRADE CO.,LTD
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IPP045N10N3GXKSA1 MOSFET Power Electronics NChannel MOSFET For Switching Applications
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IPP045N10N3GXKSA1 MOSFET Power Electronics NChannel MOSFET for Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min ......
Shenzhen Sai Collie Technology Co., Ltd.
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F7N65L TO-220F-3L N-CHANNEL POWER MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors
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...MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications......
Shenzhen Hunt Electronics Co., Ltd
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MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting
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Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode recovery phase • Optimized softness APPLICATIONS......
Shenzhen Weitaixu Capacitor Co.,Ltd
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MRF151G N-CHANNEL BROADBAND RF POWER MOSFET FSL RF Power Transistors RF
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MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET. Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
Mega Source Elec.Limited
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MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe
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Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage ......
Anterwell Technology Ltd.
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