Durable Industrial High Current IGBT , Energy Storage Insulated Gate Transistor
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... current density and faster switching speed. It has a current density of 400A/c㎡ and a switching speed of 60KHz. The high power bipolar transistor is widely used in OBC, charging piles, welding machines, switching power supplies, photovoltaic inverters,...
Reasunos Semiconductor Technology Co., Ltd.
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TO-247 Enhancement Mode Power IGBT 25A 1200V High Current Capacity
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...IGBT High Current Capacity N-Channel Enhancement Mode Power IGBT LGT25N120B FEATURES • Trench and field-stop technology • High speed switching • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness performance APPLICATIONS • General inverter • Motor drives IGBTs......
Guangdong Lingxun Microelectronics Co., Ltd
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IRGP4062DPBF Igbt 400a 600v High Efficiency High Current Reliable Power Module
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... • Low EMI noise • Low inductance • High current capability • High speed switching • Low leakage current • Improved power dissipation • Temperature protection • Easy to mount Specifications: • Maximum Collector-Emitter Voltage: 1200V •...
Shenzhen Sai Collie Technology Co., Ltd.
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VDE High Power IGBT Module , IXYS Thyristor Diode Module MDD44-16N1B
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... High Power IGBT Module Electronic components Discrete Semiconductor Modules Phase leg Features / Advantages Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current ......
Guangzhou Sande Electric Co.,Ltd.
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FF300R12KE4 High Power Igbt Module
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...High Power Igbt Module N-CH 1200V 460A IGBT Inverter IGBT Modules Applications Motor control and drives Uninterruptible Power Supplies (UPS) Specifications Product Attribute Attribute Value Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.75 V Continuous Collector Current......
Shenzhen Retechip Electronics Co., Ltd
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BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance
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BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance BSC011N03LSI Mosfet TDSON-8 With High Current And Low Internal Resistance Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET RoHS......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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UHCT0600A Industrial Grade Protection High Current Probe 0.6kA Peak Adaption IGBT Switch Analysis
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... scenarios. 2.High frequency response 50MHz: Supports switching loss analysis of semiconductor devices. 3.High di/dt capability 40A/ns: Quickly respond to steep current changes, such as IGBT turn-off transients. 4.Compact structure design: The body size is...
Shenzhen Knowhow Technology Co.,limited
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single high-power IGBT driver core 1DI 825,Suitable for all IGBTs up to 1200V/1700V
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... IGBT Driver 1DI 825 single high-power IGBT driver core Features ● ASIC single IGBT Driver Core ● Suitable for all IGBTs up to 1200V/1700V ● Short circuit and over current protection by VCEsat monitoring ● Independent monitoring of each IGBT VCEsat......
BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
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200A 1700V High Power IGBT Module / FF200R17KE4HOSA1 SP000713374
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...IGBT Module IGBT Module 200A 1700V High Power FF200R17KE4 Manufacturer: Infineon Product Type: IGBT Modules Configuration: Dual Collector-emitter maximum voltage VCEO: 1.7 kV Collector-emitter saturation voltage: 1.95 V Continuous collector current at 25 C: 310 A Gate-emitter leakage current......
Eastern Stor International Ltd.
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High Speed IGBTs Integrated Circuit IC Chip IXGR40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM C2 Class
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IXGR40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM C2-Class High Speed IGBTs IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 56A Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A Power - Max......
Shenzhen Koben Electronics Co., Ltd.
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