FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation
|
FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 19.4A (Ta......
Shenzhen Sai Collie Technology Co., Ltd.
|
FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance
|
FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components......
Shenzhen Koben Electronics Co., Ltd.
|
Small ESC Program Box Esc Auto Parts Mosfet Material High Performance
|
ESC Parts Program Box for Fliermodel RC Air Car Boat Skate Ebike ESC By the Flier Program Box, you can set all of function value very simply.Setting procedure as follows: 1.Put the JR tip of ESC Plug in anyone of the 4PIN connector in Prog-Box. 2.Connect ......
Shenzhen Flier Electronic Co., Ltd.
|
24A 110W Single FETs MOSFETs Transistors IMBG65R107M1H Integrated Circuit Chip
|
...FETs MOSFETs Transistors IMBG65R107M1H Integrated Circuit Chip Product Description Of IMBG65R107M1H IMBG65R107M1H provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge. Specification Of IMBG65R107M1H Part Number: IMBG65R107M1H Channels: 1 Vds: 650 V Rds On: 42 MOhms Id: 63 A Vgs Th: 5.7 V Benefits Of IMBG65R107M1H Unique combination of high performance, high...
ShenZhen Mingjiada Electronics Co.,Ltd.
|
Motor Driver Low Voltage Fet Stable For High Frequency Switch
|
High EAS Capability Low Rds(ON) MOSFET for High-frequency Switch Application *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, ......
Reasunos Semiconductor Technology Co., Ltd.
|
High Performance Mosfet Power Transistor With Extreme High Cell Density
|
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
High Performance Mosfet Power Transistor With Extreme High Cell Density
|
|
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)...
Beijing Silk Road Enterprise Management Services Co.,LTD
|
High-Performance Semiconductor Electrical Insulating Sheet Thermal Conductive Silicone Gasket Sil Pad For IGBT Mosfet
|
High-Performance Semiconductor Electrical Insulating Sheet Thermal Conductive Silicone Gasket Sil Pad For IGBT Mosfet Products discription TIS®800K series is a thermal silicone product featuring a ceramic-filled layer coated on a polyimide film, offering excellent thermal conductivity and heat transfer performance......
Dongguan Ziitek Electronic Materials & Technology Ltd.
|
600V 105 MOhm Typ. 26A N Channel Power Mosfet , Single High Power Transistor
|
Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet......
Shenzhen Weitaixu Capacitor Co.,Ltd
|
SI2304DS,215 N-Channel 20V 3.7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs
|
...MOSFET with Ultra-Low 45mandOmega; RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs andnbsp; Features TrenchMOSandtrade; technology Very fast switching Subminiature surface mount package. andnbsp; Applications Battery management High......
TOP Electronic Industry Co., Ltd.
|
Submit your “fets mosfets with high performance” inquiry in a minute :