IXFH160N15T2 Mosfet Power Transistor 160A 150V 880W N Channel TrenchT2
|
...Power Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2 Description DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power......
Shenzhen Retechip Electronics Co., Ltd
|
RA03M8087M-101 Mosfet Power Transistor For Portable Radio H46S Package
|
... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to...
Shenzhen Koben Electronics Co., Ltd.
|
AD9364BBCZ RF Power Transistors 200W High Performing Reliable Power Solutions
|
AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ......
Shenzhen Sai Collie Technology Co., Ltd.
|
Low voltage NPN power transistor MJD31CT4 MJD31C TO-252 New and Original
|
... Applications ■ General purpose switching and amplifier transistor Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (......
Mega Source Elec.Limited
|
Switch Circuit High Voltage Npn Power Transistor TIP42C 100V 6A TO220 Package
|
... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ......
Shenzhen ATFU Electronics Technology ltd
|
30P06D TO-252 High Power Transistor , Custom Field Effect Transistor
|
...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. High Power Transistor GENERAL FEATURES V DS =- 60V,I D =-30A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V High Power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
|
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power...
Beijing Silk Road Enterprise Management Services Co.,LTD
|
IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor
|
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •...
Shenzhen Weitaixu Capacitor Co.,Ltd
|
Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
|
... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ......
Shenzhen Huahao Gaosheng Technology Co., Ltd
|
MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors
|
... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available •...
Anterwell Technology Ltd.
|
Submit your “direct inserted power transistor” inquiry in a minute :