12A Triac Semiconductor Device LGE BT138-600E-LGE Suitable for Inductive Load Switching Applications

Categories	TRIACs
Description:	TO-220AB TRIACs RoHS
Mfr. Part #:	BT138-600E-LGE
Model Number:	BT138-600E-LGE
Package:	TO-220AB

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12A Triac Semiconductor Device LGE BT138-600E-LGE Suitable for Inductive Load Switching Applications

Product Overview

The LGE BT138 series are 12A, 3 & 4 quadrant Triacs designed for inductive load switching and ON/OFF function applications. These silicon bidirectional devices feature singlesided trenching technology, mesa glass passivation, and multi-layer metallized electrodes for high blocking voltage and temperature stability. They are suitable for use in washing machines, induction motor starting circuits, vacuum cleaners, power tools, and motor speed control, heating regulation, and solid-state relay applications.

Product Attributes

Brand: LGE
Moisture Sensitivity: MSL Level 1, per J-STD-020
Terminals: Matte Tin Finish
Solderable per MIL-STD-202 Method 208
Case Material: Molded Plastic
Molding compound meet UL Flammability Classification Rating 94V-0
Case: JEDEC TO-220AB, ITO-220AB, TO-263

Technical Specifications

Parameter	Symbol	BT138-600	BT138-800	Units
MAXIMUM RATING
R.M.S. On-State Current @ Tc=110	IT(RMS)	12	12	A
Non-Repetitive Surge Peak On-State Current (f=50Hz, T=20ms)	ITSM	120	120	A
Non-Repetitive Surge Peak On-State Current (f=60Hz, T=16.7ms)	ITSM	115	115	A
I2t Value for Fusing (tp=10ms)	I2t	72	72	A²s
Critical Rate of Rise of On-State Current (IG=2IGT, tr100ns, F=120Hz, Tj=125)	di/dt	50	50	A/s
Repetitive peak Off-State voltage @ Tj=25	VDRM/VRRM	600	800	V
Non repetitive surge peak off-state voltage (tp=10ms, Tj=25)	VDSM/VRSM	VDRM/VRRM+100	VDRM/VRRM+100	V
Peak Gate Current (tp=20s, Tj=125)	IGM	4	4	A
Average Gate Power Dissipation (Tj=125)	PG(AV)	1	1	W
Typical Thermal Resistance (Junction to Ambient) TO-220AB/TO-263	RJA	60	60	/W
Typical Thermal Resistance (Junction to Ambient) TO-220AB Insulated	RJA	45	45	/W
Typical Thermal Resistance (Junction to Ambient) TO-220F Insulated	RJA	60	60	/W
Typical Thermal Resistance (Junction to Case (AC)) TO-220AB/TO-263	RJC	1.2	1.2	/W
Typical Thermal Resistance (Junction to Case (AC)) TO-220AB Insulated	RJC	2.1	2.1	/W
Typical Thermal Resistance (Junction to Case (AC)) TO-220F Insulated	RJC	2.5	2.5	/W
Maximum Operating Junction temperature	TJ	-40~+125	-40~+125
Storage temperature range	TSTG	-40~+150	-40~+150
ELECTRICAL CHARACTERISTICS ( QUADRANTS)
Gate Trigger Current (VD=12V,RL=100)	IGT	SW=10, CW=35, BW=50	SW=10, CW=35, BW=50	mA
Gate Trigger Voltage	VGT	1.3	1.3	V
Gate Non-Trigger Voltage (Tj=125)	VGD	0.2	0.2	V
Holding Current (IT=0.5A)	IH	SW=10, CW=40, BW=60	SW=10, CW=40, BW=60	mA
Latching Current (IG=1.2IGT) quadrant	IL	SW=30, CW=50, BW=70	SW=30, CW=50, BW=70	mA
Latching Current (IG=1.2IGT) quadrant	IL	SW=40, CW=60, BW=80	SW=40, CW=60, BW=80	mA
Critical Rate of Rise of Off-State Voltage (VD=2/3VDRM,Tj=125)	dv/dt	SW=200, CW=500, BW=1000	SW=200, CW=500, BW=1000	V/s
Critical Rate of Rise of Off-State Voltage at Commutation (Tj=125)	(dv/dt)c	8	8	V/s
ELECTRICAL CHARACTERISTICS ( QUADRANTS)
Gate Trigger Current (VD=12V,RL=100)	IGT	D=5, E=10, F=25, G=50 (-) D=10, E=25, F=70, G=100 ()	D=5, E=10, F=25, G=50 (-) D=10, E=25, F=70, G=100 ()	mA
Gate Trigger Voltage	VGT	1.3	1.3	V
Gate Non-Trigger Voltage (Tj=125)	VGD	0.2	0.2	V
Holding Current (IT=0.5A)	IH	D=10, E=20, F=40, G=60	D=10, E=20, F=40, G=60	mA
Latching Current (IG=1.2IGT) quadrant	IL	D=10, E=30, F=50, G=70	D=10, E=30, F=50, G=70	mA
Latching Current (IG=1.2IGT) quadrant	IL	D=20, E=40, F=70, G=100	D=20, E=40, F=70, G=100	mA
Critical Rate of Rise of Off-State Voltage (VD=2/3VDRM,Tj=125)	dv/dt	D=20, E=50, F=100, G=200	D=20, E=50, F=100, G=200	V/s
Critical Rate of Rise of Off-State Voltage at Commutation (Tj=125)	(dv/dt)c	10	10	V/s
STATIC CHARACTERISTICS
Peak On-State Voltage (ITM=32A,Tj=25)	VTM	1.60	1.60	V
Threshold Voltage (Tj=125)	VTO	0.87	0.87	V
Dynamic Resistance (Tj=125)	Rd	36.6	36.6	m
Repetitive Peak Off-Statte Current (VDRM=VRRM, Tj=25)	IDRM	5	5	A
Repetitive Peak Off-Statte Current (VDRM=VRRM, Tj=125)	IRRM	1	1	mA

2511181950_LGE-BT138-600E-LGE_C52766542.pdf

12A Triac Semiconductor Device LGE BT138-600E-LGE Suitable for Inductive Load Switching Applications

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