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PNP transistor GOODWORK MMBTA94 offering high breakdown voltage for various electronic applications

Categories	Single Bipolar Transistors
Current - Collector Cutoff:	100nA
Emitter-Base Voltage(Vebo):	5V
Pd - Power Dissipation:	350mW
Transition frequency(fT):	50MHz
type:	PNP
Current - Collector(Ic):	200mA
Number:	1 PNP
Collector - Emitter Voltage VCEO:	400V
Description:	Bipolar (BJT) Transistor PNP 400V 200mA 50MHz 350mW Surface Mount SOT-23
Mfr. Part #:	MMBTA94
Model Number:	MMBTA94
Package:	SOT-23

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PNP transistor GOODWORK MMBTA94 offering high breakdown voltage for various electronic applications

MMBTA94 PNP Transistors

The MMBTA94 is a PNP transistor featuring high breakdown voltage and serving as a complement to the MMBTA44. It is suitable for various electronic applications requiring reliable PNP amplification and switching.

Product Attributes

Brand: DEMACHEL
Type: PNP Transistors
Package: SOT-23
Complement to: MMBTA44

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector- base breakdown voltage	VCBO	Ic= -100 A, IE=0	-400			V
Collector- emitter breakdown voltage	VCEO	Ic= -1 mA, IB=0	-400			V
Emitter- base breakdown voltage	VEBO	IE= -100A, IC=0	-5			V
Collector-base cut-off current	ICBO	VCB= -400 V, IE=0			-100	nA
Emitter cut-off current	IEBO	VEB= -4V, IC=0			-100	nA
Collector-emitter saturation voltage	VCE(sat)1	IC=-10 mA, IB=-1mA			-0.2	V
Collector-emitter saturation voltage	VCE(sat)2	IC=-50 mA, IB=-5mA			-0.3	V
Base-emitter saturation voltage	VBE(sat)	IC= -10mA, IB=- 1mA			-0.75	V
DC current gain	hFE(1)	VCE= -10V, IC= -10mA	80		300
	hFE(2)	VCE= -10V, IC= -1mA	70
	hFE(3)	VCE= -10V, IC= -100mA			40
	hFE(4)	VCE= -10V, IC= -50mA			40
Transition frequency	fT	VCE= -20V, IC= 10mA,f=30MHz		50		MHz

Mechanical Data

Symbol	Parameter	Unit	Min	Max
A		mm	1.1	1.4
C		mm	2.6	3.0
D		mm	0.0	0.15
E		mm	2.2	2.8
HE		mm	1.7	1.95
e		mm	0.9	1.2
L		mm	0.3	0.5
L1		mm	0.08	0.15
a		(ref)	0.36
e		(ref)	0.55
M		(ref)	6
L1		(ref)	22
a		(ref)	3
e		(ref)	14
M		(ref)	6
L1		(ref)	35
a		(ref)	47
e		(ref)	110
M		(ref)	87
L1		(ref)	118
a		(ref)	102
e		(ref)	20
M		(ref)	43
L1		(ref)	150
a		(ref)	12
e		(ref)	77
M		(ref)	67

Absolute Maximum Ratings

Parameter	Symbol	Rating	Unit
Collector - Base Voltage	VCBO	-400	V
Collector - Emitter Voltage	VCEO	-400	V
Emitter - Base Voltage	VEBO	-5	V
Collector Current - Continuous	IC	-200	mA
Collector Current -Pulsed	ICM	-300	mA
Collector Power Dissipation	PC	350	mW
Thermal Resistance From Junction To Ambient	RJA	150	/W
Junction Temperature	TJ	150
Storage Temperature range	Tstg	-55 to 150

Classification of hfe(1)

Type	Range	Marking
MMBTA94	80-300	4D
MMBTA94-L	100-200

2504101957_GOODWORK-MMBTA94_C42456331.pdf

PNP transistor GOODWORK MMBTA94 offering high breakdown voltage for various electronic applications

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