High reliability switching transistor GOODWORK MMBT4403 suitable for electronic circuit applications

Categories	Single Bipolar Transistors
Emitter-Base Voltage(Vebo):	5V
Current - Collector Cutoff:	100nA
Pd - Power Dissipation:	300mW
Transition frequency(fT):	200MHz
type:	PNP
Current - Collector(Ic):	-
Collector - Emitter Voltage VCEO:	40V
Operating Temperature:	-55℃~+150℃
Description:	Bipolar (BJT) Transistor PNP 40V 200MHz 300mW Surface Mount SOT-23
Mfr. Part #:	MMBT4403
Model Number:	MMBT4403
Package:	SOT-23

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Hefei Purple Horn E-Commerce Co., Ltd.

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MMBT4403 PNP TRANSISTOR

The MMBT4403 is a PNP transistor designed for switching applications. It offers key features suitable for various electronic circuits.

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO	IC = -100uA, IE = 0	-40			V
Collector-Emitter Voltage	VCEO	IC = -1 mA, IB = 0	-40			V
Emitter-Base Voltage	VEBO	IE = -100uA, IC = 0	-5			V
Collector Current - Continuous	IC				-600	mA
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)			300	mW
Thermal Resistance From Junction To Ambient	RthJA				417	/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		150
Collector cut-off current	ICBO	VCB = -35V, IE = 0			-0.1	uA
Collector cut-off current	ICEX	VEB = -4V, IC =0			-0.1	uA
Emitter cut-off current	IEBO	VCE = -1V, IC=-10mA			-30	uA
DC current gain	hFE1	VCE = -35V, V =0.4V EB	60
DC current gain	hFE2	IC = -150mA, IB = -15mA		100
DC current gain	hFE3	IC = -150mA, IB = -15mA		200	300
DC current gain	hFE4	IC = -500mA, IB = -50mA		100
DC current gain	hFE5	IC = -500mA, IB = -50mA		225
Collector-emitter saturation voltage	VCE(sat)	IC = -150mA, IB = -15mA		-0.4	-0.75	V
Collector-emitter saturation voltage	VCE(sat)	IC = -500mA, IB = -50mA		-1.2	-1.3	V
Base-emitter saturation voltage	VBE(sat)	IC = -150mA, IB = -15mA		-0.95		V
Delay time	td	VCC = -30V, IC = -150mA, IB1= 15mA, IB2=-15mA			30	ns
Rise time	tr	VCC = -30V, IC = -150mA, IB1= 15mA, IB2=-15mA			60	ns
Storage time	ts	VCC = -30V, IC = -150mA, IB1= 15mA, IB2=-15mA			200	ns
Fall time	tf	VCC = -30V, IC = -150mA, IB1= 15mA, IB2=-15mA			77	ns
Transition frequency	fT	VCE = -20V, IC = -20mA, f=100MHz		200		MHz
Collector-breakdown voltage	V(BR)CBO	IC = -100uA, IE = 0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC = -1 mA, IB = 0	-40			V
Emitter-base breakdown voltage	V(BR)EBO	IE = -100uA, IC = 0	-5			V

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