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General Purpose PNP Transistor Guangdong Hottech BC857BW Surface Mount Device Complementary to BC847W

Categories Single Bipolar Transistors
Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 15nA
Pd - Power Dissipation: 150mW
Transition frequency(fT): 100MHz
type: PNP
Current - Collector(Ic): 100mA
Collector - Emitter Voltage VCEO: 45V
Description: Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 0.15W Surface Mount SOT-323
Mfr. Part #: BC857BW
Model Number: BC857BW
Package: SOT-323
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General Purpose PNP Transistor Guangdong Hottech BC857BW Surface Mount Device Complementary to BC847W

Product Overview

The BC857W is a PNP bipolar transistor designed for automatic insertion, making it ideal for high-volume manufacturing. It is well-suited for general-purpose switching and AF amplifier applications. This surface mount device comes in a SOT-323 package.

Product Attributes

  • Complementary to BC847W
  • Surface Mount device
  • Case: SOT-323
  • Case Material: Molded Plastic
  • UL flammability Classification Rating: 94V-0

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-Base VoltageVCBO-50V
Collector-Emitter VoltageVCEO-45V
Emitter-Base VoltageVEBO-5V
Collector CurrentIC-100mA
Collector Power DissipationPC150mW
Junction TemperatureTJ150C
Storage TemperatureTSTG-55 ~+150C
Collector-base breakdown voltageV(BR)CBO-50VIC=-10uAIE=0
Collector-emitter breakdown voltageV(BR)CEO-45VIC=-10mAIB=0
Emitter-base breakdown voltageV(BR)EBO-5VIE=-1uAIC=0
Collector cut-off currentICBO-15nAVCB=-30V, IE=0
DC current gainhFE125-800VCE=-5V, IC=-2mA
Collector-emitter saturation voltageVCE(sat)-0.65VIC=-100mAIB=-5mA
Base-emitter saturation voltageVBE(sat)-1.1VIC=-100mAIB=-5mA
Transition frequencyfT100MHzVCE=-5V,IC=-10mA,f=100MHz
Collector output capacitanceCob4.5pFVCB=-10V, f=1MHz

2410121849_Guangdong-Hottech-BC857BW_C5364245.pdf

China General Purpose PNP Transistor Guangdong Hottech BC857BW Surface Mount Device Complementary to BC847W factory
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