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Surface Mount Schottky Diode IDCHIP B5819WS 1A 40V SOD323 Package Rectification Applications

Categories Single Diodes
Reverse Leakage Current (Ir): 1mA@40V
Voltage - DC Reverse (Vr) (Max): 40V
Diode Configuration: Independent
Voltage - Forward(Vf@If): 900mV@3A
Current - Rectified: 1A
Description: 40V Independent 900mV@3A 1A SOD-323 Single Diodes RoHS
Mfr. Part #: B5819WS
Model Number: B5819WS
Package: SOD-323
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Surface Mount Schottky Diode IDCHIP B5819WS 1A 40V SOD323 Package Rectification Applications

Product Overview

This document details the B5817WS, B5818WS, and B5819WS series of 1A surface-mount Schottky diodes in a SOD-323 package. These diodes are designed for rectification applications.

Product Attributes

  • Brand: (Indreamchip)
  • Origin: China
  • Package Type: SOD-323

Technical Specifications

ParameterSymbolB5817WSB5818WSB5819WSUnitConditions
Reverse VoltageVR203040VAbsolute Maximum Ratings (Ta = 25 OC)
Reverse Breakdown Voltage at IR = 1 mAVCharacteristics at Ta = 25 OC
203040VCharacteristics at Ta = 25 OC
Average Forward Rectified CurrentIF(AV)1AAbsolute Maximum Ratings (Ta = 25 OC)
Non-Repetitive Peak Forward Surge CurrentIFSM9A(t = 8.3 ms), Absolute Maximum Ratings (Ta = 25 OC)
Power DissipationPtot450mWAbsolute Maximum Ratings (Ta = 25 OC)
Operating Temperature RangeTj-55 to +125OCAbsolute Maximum Ratings (Ta = 25 OC)
-55 to +125OCStorage Temperature Range, Absolute Maximum Ratings (Ta = 25 OC)
Forward VoltageVF0.45Vat IF = 1 A, Characteristics at Ta = 25 OC
0.55Vat IF = 3 A, Characteristics at Ta = 25 OC
0.6Vat IF = 3 A, Characteristics at Ta = 25 OC
Reverse Voltage Leakage CurrentIR1mAat VR = 20 V, Characteristics at Ta = 25 OC
1mAat VR = 30 V, Characteristics at Ta = 25 OC
1mAat VR = 40 V, Characteristics at Ta = 25 OC
Total CapacitanceCtot120pFat VR = 4 V, f = 1 MHz, Characteristics at Ta = 25 OC

2411272123_IDCHIP-B5819WS_C2848201.pdf

China Surface Mount Schottky Diode IDCHIP B5819WS 1A 40V SOD323 Package Rectification Applications factory
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