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Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research Grade

Categories SiC Substrate
Brand Name: zmsh
Place of Origin: China
Material: SiC Crystal
Type: N
Size: 2/3/4/6/8/12
Thickness: 500um±50um
Orientations: 4.0 deg off axis + 0.5deg toward <11-20>
Surface roughness (Carbon face): Ra < 0.5nm with Carbon face epi-ready
Resistivity: < 0.25 ohm.cm
Surface roughness (Silicon face): Optical polished
TTV: <10um
BOW: <30um
Wrap: <30Um
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Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research Grade


4H-N 2/3/4/6/8/12 Inch Silicon Carbide (SiC) Substrate – Prime/Dummy/Research Grade



This product series provides high-purity Silicon Carbide (SiC) substrates in multiple diameters (2", 3", 4", 6", 8", and 12"), designed for advanced semiconductor, power electronics, and optoelectronic applications. Available in Prime (device-grade), Dummy (process-testing), and Research (experimental) grades, these substrates feature excellent thermal conductivity (> 400 W/m·K for SiC), high breakdown voltage, and superior chemical stability.


The Prime Grade ensures ultra-low defect density, making it ideal for high-performance devices like MOSFETs, Schottky diodes, and RF components. The Dummy Grade offers cost-effective solutions for process optimization, while the Research Grade supports academic and industrial R&D in wide-bandgap semiconductor technologies.

With customizable specifications (doping, thickness, polishing), these substrates meet the stringent demands of power electronics, 5G communications, and electric vehicle (EV) applications.





Specifications Table


PropertiesSpecifications
Material4H SiC
PackingSingle wafer package
TypeN Type
Diameter150 mm ±0.25 mm (4 inch)
Thickness500μm ±50 μm
Surface roughness (Carbon face)Ra ≤0.5nm with Carbon face epi-ready
Surface roughness (Silicon face)Optical polished
Orientations4.0 deg off axis ±0.5deg toward <11-20>
MPD≤0.5/cm² or less
TTV/BOW/Warp<10μm /<30μm /<30μm
FWHM≤30 arc-sec or less
Primary & Secondary FlatNOT REQUIRED (No flat grinding)
Resistivity<0.25 ohm.cm



Applications of SiC Wafers


Our 4H-N substrates are engineered for cutting-edge technologies across multiple industries:


1. Power Electronics
- Electric Vehicles (EVs): High-voltage SiC MOSFETs and inverters for efficient power conversion.
- Fast Charging Systems: Enables compact, high-efficiency chargers for EVs and consumer electronics.

- Industrial Motor Drives: Robust performance in high-temperature environments.


2. RF & Wireless Communication
- 5G Base Stations: High-frequency transistors with low signal loss.
- Radar & Satellite Systems: Enhanced power handling for aerospace and defense applications.


3. Optoelectronics
- UV LEDs & Lasers: Superior thermal management for high-brightness applications.


4.Research Technologies
- Wide-Bandgap Semiconductor Research: Fundamental studies on material properties.





Frequently Asked Questions (FAQ)


1.Can these substrates be customized in terms of doping and thickness?

Yes, we offer N-type (Nitrogen-doped) and P-type (Aluminum-doped) variants with adjustable resistivity. Thickness can range cunstomized too.


2.What is the lead time for orders?

- Standard sizes (2"-6"): 2-4 weeks.
- Large sizes (8"-12"): 4-6 weeks (subject to availability).


3.How should the substrates be stored and handled?

- Store in cleanroom conditions (Class 1000 or better).
- Handle with nitrile gloves to avoid contamination.
- Avoid mechanical stress on edges.

China Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research Grade factory
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