30W 50V GaN HEMT Rf PA Power Amplifier RF Power Transistor for 5700- 5900MHz

The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies 4000 to 6000MHz, in particular 5700- 5900MHz. The performance is guaranteed for applications operating in the mentioned frequencies There is no guarantee of performance when this part is used in applications designed outsideof these frequencies. Typical Performance (On Innotion Fixture): VDD = 50 Volts, IDQ = 110 mA, CW, Psat>30W

Applications and Features

• Suitable for wireless communication infrastructure, commercial radar, wideband amplifier, Jammer, EMCtesting,ISM etc.
• High Efficiency and Linear Gain Operations
• Thermally Enhanced Industry Standard Package
• High Reliability Metallization Process
• Excellent thermal Stability and Excellent RuΩedness
• Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Important NOTE: Proper Biasing Sequence for GaN HEMT Transistors Turning the device ON 1.Set VGS to the pinch--off (VP) voltage, typically –5 V 2.Turn on VDS to nominal supply voltage (50 V) 3.Increase VGS until IDS current is attained 4.Apply RF input power to desired level Turning the device OFF 1.Turn RF power off 2.Reduce VGS down to VP, typically –5 V 3.Reduce VDS down to 0 V 4.Turn off VGS

Important NOTE: Proper Biasing Sequence for GaN HEMT Transistors

Turning the device ON

1.Set VGS to the pinch--off (VP) voltage, typically –5 V

2.Turn on VDS to nominal supply voltage (50 V)

3.Increase VGS until IDS current is attained

4.Apply RF input power to desired level

Turning the device OFF

1.Turn RF power off

2.Reduce VGS down to VP, typically –5 V

3.Reduce VDS down to 0 V 4.Turn off VGS