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S29GL128P90TFIR10 IC FLASH 128MBIT PARALLEL 56TSOP Infineon Technologies

Categories Flash Memory IC
Brand Name: Infineon Technologies
Model Number: S29GL128P90TFIR10
MOQ: 1
Price: Based on current price
Payment Terms: T/T
Supply Ability: In stock
Delivery Time: 3-5 work days
Packaging Details: anti-static bag & cardboard box
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Organization: 16M x 8
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP
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S29GL128P90TFIR10 IC FLASH 128MBIT PARALLEL 56TSOP Infineon Technologies

Product Details

1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology


General Description

The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Distinctive Characteristics

■ Single 3V read/program/erase (2.7-3.6 V)
■ Enhanced VersatileI/O™ control
– All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
■ 90 nm MirrorBit process technology
■ 8-word/16-byte page read buffer
■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
■ Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
– Can be programmed and locked at the factory or by the customer
■ Uniform 64 Kword/128 Kbyte Sector Architecture
– S29GL01GP: One thousand twenty-four sectors
– S29GL512P: Five hundred twelve sectors
– S29GL256P: Two hundred fifty-six sectors
– S29GL128P: One hundred twenty-eight sectors
■ 100,000 erase cycles per sector typical
■ 20-year data retention typical
■ Offered Packages
– 56-pin TSOP
– 64-ball Fortified BGA
■ Suspend and Resume commands for Program and Erase operations
■ Write operation status bits indicate program and erase operation completion
■ Unlock Bypass Program command to reduce programming time
■ Support for CFI (Common Flash Interface)
■ Persistent and Password methods of Advanced Sector Protection
■ WP#/ACC input
– Accelerates programming time (when VHH is applied) for greater throughput during system production
– Protects first or last sector regardless of sector protection settings
■ Hardware reset input (RESET#) resets device
■ Ready/Busy# output (RY/BY#) detects program or erase cycle completion

Specifications

AttributeAttribute Value
ManufacturerCypress Semiconductor
Product CategoryMemory ICs
SeriesGL-P
PackagingTray Alternate Packaging
Mounting-StyleSMD/SMT
Operating-Temperature-Range- 40 C to + 85 C
Package-Case56-TFSOP (0.724", 18.40mm Width)
Operating-Temperature-40°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply2.7 V ~ 3.6 V
Supplier-Device-Package56-TSOP
Memory Capacity128M (16M x 8)
Memory-TypeFLASH - NOR
Speed90ns
ArchitectureSector
Format-MemoryFLASH
Interface-TypeParallel
Organization16 M x 8
Supply-Current-Max110 mA
Data-Bus-Width8 bit
Supply-Voltage-Max3.6 V
Supply-Voltage-Min2.7 V
Package-CaseTSOP-56
Timing-TypeAsynchronous

Functional compatible component

Form,Package,Functional compatible component

Manufacturer Part#DescriptionManufacturerCompare
S29GL128P90TAIR20
Memory
Flash, 128MX1, 90ns, PDSO56, TSOP-56Cypress SemiconductorS29GL128P90TFIR10 vs S29GL128P90TAIR20
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S29GL128P90TFIR23
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S29GL128P90TFCR20
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S29GL128P90TFCR23
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Flash, 128MX1, 90ns, PDSO56, TSOP-56Cypress SemiconductorS29GL128P90TFIR10 vs S29GL128P90TFCR23
S29GL128P90TFIR13
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Flash, 128MX1, 90ns, PDSO56, 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56SpansionS29GL128P90TFIR10 vs S29GL128P90TFIR13
S29GL128P90TAIR13
Memory
Flash, 128MX1, 90ns, PDSO56, TSOP-56Cypress SemiconductorS29GL128P90TFIR10 vs S29GL128P90TAIR13
S29GL128P90TAIR23
Memory
Flash, 128MX1, 90ns, PDSO56, TSOP-56Cypress SemiconductorS29GL128P90TFIR10 vs S29GL128P90TAIR23
S29GL128P90TFCR10
Memory
Flash, 128MX1, 90ns, PDSO56, TSOP-56Cypress SemiconductorS29GL128P90TFIR10 vs S29GL128P90TFCR10
S29GL128P90TFIR20
Memory
Flash, 128MX1, 90ns, PDSO56, 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56SpansionS29GL128P90TFIR10 vs S29GL128P90TFIR20

Descriptions

FLASH - NOR Memory IC 128Mb (16M x 8) Parallel 90ns 56-TSOP
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
Flash Memory 128Mb 3V 90ns Parallel NOR Flash
China S29GL128P90TFIR10 IC FLASH 128MBIT PARALLEL 56TSOP Infineon Technologies factory
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