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S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient

Categories UV Photodiode Sensor
Brand Name: Hamamatsu
Model Number: S12060-10
Place of Origin: Japan
MOQ: Standard
Supply Ability: 3000/pcs/month
Delivery Time: 3-5Workingdays
Packaging Details: Standard
Price: Negotiable
Type: Near infrared type
Photosensitive area: φ1 mm
Package: Metal
Package category: TO-18
Peak sensitivity wavelength (typical): 800 nm
Spectral response range: 400 to 1000 nm
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S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient

S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient


This is an 800nm ​​band near-infrared Si APD that can operate stably over a wide temperature range. Suitable for applications such as optical rangefinders and FSO (free space optics).


Features
- Breakdown voltage temperature coefficient: 0.4 V/℃
- High-speed response
- High sensitivity, low noise


Sensitivity (typical)0.5 A/W
Dark current (maximum)2 nA
Cut-off frequency (typical)600 MHz
Terminal capacitance (typical)6 pF
Breakdown voltage (typical)200 V
Breakdown voltage temperature coefficient (typical)0.4 V/°C
Gain (typical)100

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