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IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

Categories IGBT Module
Brand Name: IXYS
Model Number: IXFN38N100Q2
Place of Origin: USA
MOQ: 1pcs
Price: Email us for details
Payment Terms: T/T, Western Union
Supply Ability: 1500pcs
Delivery Time: 1day
Packaging Details: Tube
Description: IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds
Stock: 100PCS
Date Code: Newest code
Shipping by: DHL/UPS/Fedex
Condition: New*Original
Warranty: 365days
Lead free: Rohs Compliant
Lead times: Immediately Shipment
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IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

IXYS
Product Category:Discrete Semiconductor Modules
RoHS:Details
Power MOSFET Modules
Si
- 30 V, + 30 V
Chassis Mount
SOT-227-4
- 55 C
+ 150 C
IXFN38N100
Tube
Brand:IXYS
Configuration:Single
Fall Time:15 ns
Height:9.6 mm
Id - Continuous Drain Current:38 A
Length:38.23 mm
Number of Channels:1 Channel
Pd - Power Dissipation:890 W
Product Type:Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:250 mOhms
Rise Time:28 ns
Subcategory:Discrete Semiconductor Modules
Tradename: HiPerFET
Transistor Polarity:N-Channel
Typical Turn-Off Delay Time:57 ns
Typical Turn-On Delay Time:25 ns
Vds - Drain-Source Breakdown Voltage:1 kV
Width:25.42 mm
Unit Weight:1.058219 oz



Wisdtech Technology Co.,Limited
Tel: +86-755-23606019
Address: Room 1205-1207,Nanguang building,Huafu Road,
Futian District,Shenzhen,Guangdong,China

Laneya
Telephone:+86-13420902155
E-mail:sales@wisdtech.com.cn
Wechat:laneyatao66
WhatsApp:+8613420902155
Skype:sales@wisdtech.com.cn


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