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FQA11N90C MOSFET 900V N-Ch Q-FET advance C-Series

Categories N P Channel Mosfet
Brand Name: Fairchild/ON
Model Number: FQA11N90C
Place of Origin: CHINA
Transistor Type:: 1 N-Channel
Vgs - Gate-Source Voltage:: - 30 V, + 30 V
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FQA11N90C MOSFET 900V N-Ch Q-FET advance C-Series

Product AttributeAttribute Value
Manufacturer:onsemi
Product Category:MOSFET
RoHS: Details
Technology:Si
Mounting Style:Through Hole
Package / Case:TO-3PN-3
Transistor Polarity:N-Channel
Number of Channels:1 Channel
Vds - Drain-Source Breakdown Voltage:900 V
Id - Continuous Drain Current:11 A
Rds On - Drain-Source Resistance:1.4 Ohms
Vgs - Gate-Source Voltage:- 30 V, + 30 V
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:300 W
Channel Mode:Enhancement
Packaging:Tube
Brand:onsemi / Fairchild
Configuration:Single
Fall Time:85 ns
Forward Transconductance - Min:9 S
Height:20.1 mm
Length:16.2 mm
Product Type:MOSFET
Rise Time:130 ns
Factory Pack Quantity:30
Subcategory:MOSFETs
Transistor Type:1 N-Channel
Type:MOSFET
Typical Turn-Off Delay Time:130 ns
Typical Turn-On Delay Time:60 ns
Width:5 mm
Part # Aliases:FQA11N90C_NL
Unit Weight:0.162260 oz
Product Tags:

FQA11N90C

  

MOSFET 900V

  

FQA11N90C MOSFET

  
China FQA11N90C MOSFET 900V N-Ch Q-FET advance C-Series factory
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