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JANS2N2920L

Categories Bipolar Transistor Arrays
Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays
Current - Collector (Ic) (Max): 30mA
Product Status: Active
Transistor Type: 2 NPN (Dual)
Mounting Type: Through Hole
Frequency - Transition: -
Package: Bulk
Series: Military, MIL-PRF-19500/355
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Supplier Device Package: TO-78-6
Mfr: Microchip Technology
Current - Collector Cutoff (Max): 10µA (ICBO)
Power - Max: 350mW
Package / Case: TO-78-6 Metal Can
Operating Temperature: -65°C ~ 200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Base Product Number: 2N2920
Description: PNP SMALL SIGNAL SILICON TRANSIS
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JANS2N2920L

Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-78-6
Product Tags:

BAP1321-02

  

EPM7256ATC144-7

  

EPM7256ATC144-20

  
China JANS2N2920L factory
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