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IXGT32N170

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: SMD/SMT
Continuous Collector Current at 25 C :: 75 A
Pd - Power Dissipation :: 350 W
Collector- Emitter Voltage VCEO Max :: 1.7 kV
Package / Case :: TO-268-3
Maximum Operating Temperature :: + 150 C
Maximum Gate Emitter Voltage :: +/- 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.5 V
Manufacturer :: IXYS
Description: IGBT Transistors 72 Amps 1700 V 3.3 V Rds
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IXGT32N170

The IXGT32N170,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

SE555DR

  

AT93C56-10SC

  

PMF780SN

  
China IXGT32N170 factory
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