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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | Infineon Technologies |
| Model Number: | BSC070N10NS5 |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1-3 days |
| Packaging Details: | standard |
| Drain-Source Voltage (Vdss): | 700V |
| Gate-Source Voltage (Vgs: | ± 20 V |
| Drain Current (Id): | 70A |
| Drain-Source On-Resistance (Rds): | 0.025 ohm |
| Drain-Source On-Resistance (RDS(on)): | 7mΩ |
| Maximum Junction Temperature (Tj): | 175°C |
BSC070N10NS5 MOSFET Power Electronic Device High Performance and Reliable Power Switching Solution
N-channel MOSFET, BSC070N10NS5
Product Description:
The BSC070N10NS5 is a high-speed, high-voltage N-channel MOSFET with low drain-source on-resistance. It features low gate charge, low output capacitance, fast switching times, and low gate-to-drain charge. This MOSFET is ideal for use in high-side switching, power supplies, DC-DC converters, and other high-frequency applications.
Features:
- N-channel MOSFET
- High-speed switching
- Low drain-source on-resistance
- Low gate charge
- Low output capacitance
- Fast switching times
- Low gate-to-drain charge
Specifications:
- Part Number: BSC070N10NS5
- Configuration: N-Channel
- Drain-Source Voltage (Vdss): 700 V
- Gate-Source Voltage (Vgs): ± 20 V
- Drain Current (Id): 70 A
- Drain-Source On-Resistance (Rds): 0.025 ohm
- Maximum Power Dissipation
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