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AT28HC64BF-12SU Parallel EEPROM Memory IC Chip Manufacturers 64Kbit 120 Ns 28-SOIC

Categories Memory IC Chip
Brand Name: MICROCHIP
Model Number: AT28HC64BF-12SU
Certification: RoHS
Place of Origin: America
MOQ: 27 PCS
Price: Negotiable
Payment Terms: L/C, D/A, D/P, T/T
Supply Ability: 6K PCS
Delivery Time: 2-3 DAYS
Packaging Details: 27 PCS/Tube
Category: Memory
Mfr: Microchip Technology
Package: Tube
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kbit
Memory Organization: 8K x 8
Memory Interface: Parallel
Access Time: 120 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TC)
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AT28HC64BF-12SU Parallel EEPROM Memory IC Chip Manufacturers 64Kbit 120 Ns 28-SOIC

AT28HC64BF-12SU EEPROM Memory IC 64Kbit Parallel 120 Ns 28-SOIC

Description:

The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM).

Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS

technology, the device offers access times to 55 ns with power dissipation of just 220 mW. When the device is

deselected, the CMOS standby current is less than 100 µA.


Quick Detail:

Manufacturer
Microchip Technology
Manufacturer Product Number
AT28HC64BF-12SU
Manufacturer Standard Lead Time
52 Weeks
Detailed Description
EEPROM Memory IC 64Kbit Parallel 120 ns 28-SOIC

Product Attributes:

TYPE
DESCRIPTION
Category
Memory
Mfr
Microchip Technology
Package
Tube
Product Status
Active
Memory Type
Non-Volatile
Memory Format
EEPROM
Technology
EEPROM
Memory Size
64Kbit
Memory Organization
8K x 8
Memory Interface
Parallel
Write Cycle Time - Word, Page
10ms
Access Time
120 ns
Voltage - Supply
4.5V ~ 5.5V
Operating Temperature
-40°C ~ 85°C (TC)
Mounting Type
Surface Mount
Package / Case
28-SOIC (0.295", 7.50mm Width)
Supplier Device Package
28-SOIC
Base Product Number
AT28HC64

Additional Resources:

ATTRIBUTEDESCRIPTION
Other NamesAT28HC64BF12SU
Standard Package27

Features

• Fast Read Access Time – 70 ns

• Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes

• Fast Write Cycle Times

– Page Write Cycle Time: 2 ms Maximum (Standard)

– 1 to 64-byte Page Write Operation

• Low Power Dissipation

– 40 mA Active Current

– 100 µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling and Toggle Bit for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 100,000 Cycles

– Data Retention: 10 Years

• Single 5 V ±10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Only

Data Picture:


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