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RGS80TS65HRC11 Trench Field Stop IGBT 650V 73A 272W Through Hole TO-247N

Categories IGBT Transistor Module
Brand Name: ROHM Semiconductor
Model Number: RGS80TS65HRC11
MOQ: 50pcs
Price: Negotiable
Supply Ability: 1000000pcs
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 73 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 272 W
Switching Energy: 1.05mJ (on), 1.03mJ (off)
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RGS80TS65HRC11 Trench Field Stop IGBT 650V 73A 272W Through Hole TO-247N

RGS80TS65HRC11 IGBT Trench Field Stop 650 V 73 A 272 W Through Hole TO-247N

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes to reducing the size and improving the efficiency of applications. The RGS IGBTs utilize original trench-gate and thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (VCE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.

FEATURES

  • Class-leading low conduction loss
  • High efficiency
  • Reduce size
  • Available in both 1200V and 600V ratings
  • Utilize trench-gate and thin-wafer technologies
  • Offer low collector-emitter saturation voltage
  • Reduced switching losses
  • Increase the energy savings
  • AEC-Q101 qualified
  • TO-247N package

APPLICATIONS

  • General inverter for automotive and industrial use
  • Positive Temperature Coefficient (PTC) heater
  • Electric compressors

PERFORMANCE GRAPHS

Performance Graph - ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs
China RGS80TS65HRC11 Trench Field Stop IGBT 650V 73A 272W Through Hole TO-247N factory
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