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IPD350N06LG Semiconductors Discrete Semiconductors Transistors MOSFET

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Walton Electronics Co., Ltd.

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Product Attribute	Attribute Value
Product Category:	MOSFET
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	10 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	68 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Configuration:	Single
Fall Time:	20 ns
Height:	2.3 mm
Length:	6.5 mm
Product Type:	MOSFET
Rise Time:	21 ns
Series:	OptiMOS 2
	2500
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	6 ns
Width:	6.22 mm
Part # Aliases:	IPD35N6LGXT SP000443746 IPD350N06LGBTMA1
Unit Weight:	0.139332 oz

Product Tags:

Mosfet Transistor IPD350N06LG

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