8INCH 12INCH 6INCH GaN-On-Si EPI-WAFERS For Power RF LED Application

8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR FOR POWER RF LED application

GaN epitaxial wafer (GaN EPI on Silicon)
ZMSH is an agent of GaN-on-Si epitaxial wafers in Shanghia. Gallium nitride (GaN) has been widely used in power devices and blue light-emitting diodes due to its wide energy gap.

Introduction
There is a growing need for energy saving and advancements in information and communication systems. To meet these needs, we have developed a wide-bandgap semiconductor substrate with gallium nitride (GaN) as the next-generation semiconductor material.
Concept: By growing single-crystal GaN thin films on silicon substrates, we can produce large, inexpensive semiconductor substrates for next-generation devices

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Target: For home appliances: switchgears and inverters with breakdown voltages in the hundreds. For mobile phone base stations: high power and high frequency transistors.
Advantages: Our silicon substrates are cheaper to grow GaN than other silicon carbide or sapphire substrates, and we can provide GaN devices tailored to customer requirements.

Glossary
wide band gap
Band gap refers to the energy field formed by the band structure in a crystal that does not contain electrons (semiconductor materials with a band gap larger than silicon are often referred to as wide band gap semiconductors). Wide-bandgap material with good optical transparency and high electrical breakdown voltage

Heterojunction
is a stack of different materials. Generally speaking, in the semiconductor field, relatively thin films of semiconductor materials with different compositions are stacked. In the case of mixed crystals, heterojunctions with atomically smooth interfaces and good interface properties are obtained. Due to these interfaces, a layer of two-dimensional electron gas with high electron mobility is created