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| Categories | Technical Ceramic Parts | 
|---|---|
| Brand Name: | ZG | 
| Model Number: | MS | 
| Certification: | CE | 
| Place of Origin: | CHINA | 
| MOQ: | 1 piece | 
| Price: | USD10/piece | 
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram | 
| Supply Ability: | 10000 pieces per month | 
| Delivery Time: | 3 working days | 
| Packaging Details: | Strong wooden box for Global shipping | 
| Application: | making LD , LED , microwave circuit and solar cell applications | 
| Diameter: | Ø 2" / Ø 3" / Ø 4" | 
| Thickness: | 350 um ~ 625 um | 
| Grade: | Epi polished grade / mechanical grade | 
| Company Info. | 
| HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD | 
| Verified Supplier | 
| View Contact Details | 
| Product List | 
Single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for making LD , LED , microwave circuit, solar cell
We provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) to opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , in diameter range from 2" to 4 ". We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical propertirs and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafers , both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications , please contact us for more product information .
GaAs Wafer Feature and Application
| Feature | Application field | 
|---|---|
| High electron mobility | Light emitting diodes | 
| High frequency | Laser diodes | 
| High conversion efficiency | Photovoltaic devices | 
| Low power consumption | High Electron Mobility Transistor | 
| Direct band gap | Heterojunction Bipolar Transistor | 
Product Specification
| Growth | LEC / VGF | 
|---|---|
| Diameter | Ø 2" / Ø 3" / Ø 4" | 
| Thickness | 350 um ~ 625 um | 
| Orientation | <100> / <111> / <110> or others | 
| Conductivity | P - type / N - type / Semi-insulating | 
| Dopant | Zn / Si / undoped | 
| Surface | One side polished or two sides polished | 
| Concentration | 1E17 ~ 5E19 cm-3 | 
| TTV | <= 10 um | 
| Bow / Warp | <= 20 um | 
| Grade | Epi polished grade / mechanical grade | 

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