W25N01GVZEIG SLC Nand Flash Memory IC 3V 1G BIT Winbond TW SPI

W25N01GVZEIG 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI

BUFFER READ & CONTINUOUS READ

1.GENERAL DESCRIPTIONS

The W25N01GV (1G-bit) Serial SLC NAND Flash Memory provides a storage solution for systems with

limited space, pins and power. The W25N SpiFlash family incorporates the popular SPI interface and the

traditional large NAND non-volatile memory space. They are ideal for code shadowing to RAM, executing

code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single

2.7V to 3.6V power supply with current consumption as low as 25mA active and 10µA for standby. All W25N

SpiFlash family devices are offered in space-saving packages which were impossible to use in the past for

the typical NAND flash memory.

The W25N01GV 1G-bit memory array is organized into 65,536 programmable pages of 2,048-bytes each.

The entire page can be programmed at one time using the data from the 2,048-Byte internal buffer. Pages

can be erased in groups of 64 (128KB block erase). The W25N01GV has 1,024 erasable blocks.

The W25N01GV supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial Clock,

Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to

104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz

(104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions.

The W25N01GV provides a new Continuous Read Mode that allows for efficient access to the entire

memory array with a single Read command. This feature is ideal for code shadowing applications.

A Hold pin, Write Protect pin and programmable write protection, provide further control flexibility.

Additionally, the device supports JEDEC standard manufacturer and device ID, one 2,048-Byte Unique ID

page, one 2,048-Byte parameter page and ten 2,048-Byte OTP pages. To provide better NAND flash

memory manageability, user configurable internal ECC, bad block management are also available in

W25N01GV.

2. FEATURES

• New W25N Family of SpiFlash Memories

– W25N01GV: 1G-bit / 128M-byte

– Standard SPI: CLK, /CS, DI, DO, /WP,/Hold

– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold

– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3

– Compatible SPI serial flash commands

• Highest Performance Serial NAND Flash

– 104MHz Standard/Dual/Quad SPI clocks

– 208/416MHz equivalent Dual/Quad SPI

– 50MB/S continuous data transfer rate

– Fast Program/Erase performance

– More than 100,000 erase/program cycles

– More than 10-year data retention

• Efficient “Continuous Read Mode”(1)

– Alternative method to the Buffer Read Mode

– No need to issue “Page Data Read” between Read commands

– Allows direct read access to the entire array

• Low Power, Wide Temperature Range

– Single 2.7 to 3.6V supply

– 25mA active, 10µA standby current

– -40°C to +85°C operating range

• Flexible Architecture with 128KB blocks

– Uniform 128K-Byte Block Erase

– Flexible page data load methods

• Advanced Features

– On chip 1-Bit ECC for memory array

– ECC status bits indicate ECC results

– bad block management and LUT(2) access

– Software and Hardware Write-Protect

– Power Supply Lock-Down and OTP protection

– 2KB Unique ID and 2KB parameter pages

– Ten 2KB OTP pages(3)

• Space Efficient Packaging

– 8-pad WSON 8x6-mm

– 16-pin SOIC 300-mil

– 24-ball TFBGA 8x6-mm

– Contact Winbond for other package options

Deli electronics tehcnology Co.,Ltd

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