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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

Categories Mosfet Power Transistor
Brand Name: Hua Xuan Yang
Model Number: AP3N10BI
Certification: RoHS、SGS
Place of Origin: ShenZhen China
MOQ: Negotiation
Price: Negotiated
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
Delivery Time: 1 - 2 Weeks
Packaging Details: Boxed
Product name: N Channel Mosfet Power
Model: AP3N10BI
Marking: MA4
Pack: SOT23
VDSDrain-Source Voltage: 100V
VGSGate-Sou rce Voltage: ±20A
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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V


N Channel Mosfet Power Working and Characteristics


The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the heavily doped layer with a low resistive material and the N- layer is a lightly doped layer with the high resistance region.


N Channel Mosfet Power Features



VDS= 100V I D=2.8 A



RDS(ON)< 320mΩ @ VGS=10V


N Channel Mosfet Power Application


Battery protection

Uninterruptible power supply


Package Marking and Ordering Information


Product IDPackMarkingQty(PCS)
AP3N10BISOT23MA43000

Absolute Maximum Ratings (TC=25 unless otherwise specified)


SymbolParameterRatingUnits
VDSDrain-Source Voltage100V
VGSGate-Sou rce Voltage±20V
ID@TA=25℃Continuous Drain Current, V GS @ 10V 12.8A
ID@TA=70℃Continuous Drain Current, V GS @ 10V 11A
IDMPulsed Drain Current25A
PD@TA=25 ℃Total Power Dissipation31W
TSTGStorage Temperature Range-55 to 150
TJOperating Junction Temperature Range-55 to 150
RθJAThermal Resistance Junction-ambient 1125℃/W
RθJCThermal Resistance Junction-Case 180℃/W

Electrical Characteristics (TJ=25 , unless otherwise noted)


SymbolParameterConditionsMin.Typ.Max.Unit
BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA100------V
△ BVDSS/△TJBVDSS Temperature CoefficientReference to 25℃ , ID=1mA---0.067---V/℃
RDS(ON)Static Drain-Source On-ResistanceVGS=10V , I D=1A---260310

VGS=4.5V , I D=0.5A---270320
VGS(th)Gate Threshold VoltageVGS=VDS , I =250uA1.01.52.5V
△VGS(th)VGS(th) Temperature Coefficient----4.2---mV/℃
IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------1uA
IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------5uA
IGSSGate-Source Leakage CurrentVGS=±20V , VDS=0V------±100nA
gfsForward TransconductanceVDS=5V , ID=1A---2.4---S
RgGate ResistanceVDS=0V , VGS=0V , f=1MHz---2.85.6
QgTotal Gate Charge (10V)---9.713.6
QgsGate-Source Charge---1.62.2
QgdGate-Drain Charge---1.72.4
Td(on)Turn-On Delay Time

VDD=50V , VGS=10V ,

RG=3.3

ID=1A

---1.63.2

ns

Tr
Td(off)Turn-Off Delay Time---13.627
TfFall Time---1938
CissInput Capacitance---508711
CossOutput Capacitance---2941
CrssReverse Transfer Capacitance---16.423
ISContinuous Source Current 1,4VG=VD=0V , Force Current------1.2A
ISMPulsed Source Current 2,4------5A
VSDDiode Forward Voltage2VGS=0V , IS=1A , TJ=25℃------1.2V
trrReverse Recovery TimeIF=1A , dI/dt=100A/µs ,---14---nS
QrrReverse Recovery Charge---9.3---nC
SymbolParameterConditionsMin.Typ.Max.Unit
BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA100------V
△ BVDSS/△TJBVDSS Temperature CoefficientReference to 25℃ , ID=1mA---0.067---V/℃
RDS(ON)Static Drain-Source On-ResistanceVGS=10V , I D=1A---260310

VGS=4.5V , I D=0.5A---270320
VGS(th)Gate Threshold VoltageVGS=VDS , I =250uA1.01.52.5V
△VGS(th)VGS(th) Temperature Coefficient----4.2---mV/℃
IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------1uA
IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------5uA
IGSSGate-Source Leakage CurrentVGS=±20V , VDS=0V------±100nA
gfsForward TransconductanceVDS=5V , ID=1A---2.4---S
RgGate ResistanceVDS=0V , VGS=0V , f=1MHz---2.85.6
QgTotal Gate Charge (10V)---9.713.6
QgsGate-Source Charge---1.62.2
QgdGate-Drain Charge---1.72.4
Td(on)Turn-On Delay Time

VDD=50V , VGS=10V ,

RG=3.3

ID=1A

---1.63.2

ns

Tr
Td(off)Turn-Off Delay Time---13.627
TfFall Time---1938
CissInput Capacitance---508711
CossOutput Capacitance---2941
CrssReverse Transfer Capacitance---16.423
ISContinuous Source Current 1,4VG=VD=0V , Force Current------1.2A
ISMPulsed Source Current 2,4------5A
VSDDiode Forward Voltage2VGS=0V , IS=1A , TJ=25℃------1.2V
trrReverse Recovery TimeIF=1A , dI/dt=100A/µs ,---14---nS
QrrReverse Recovery Charge---9.3---nC

Note :

1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%

3.The power dissipation is limited by 150 ℃ junction temperature


4 .The data is theoretically the same as ID and IDM, in real applications , should be limited by total power dissipation.



Symbol

Dimensions in Millimeters
MIN.MAX.
A0.9001.150
A10.0000.100
A20.9001.050
b0.3000.500
c0.0800.150
D2.8003.000
E1.2001.400
E12.2502.550
e0.950TYP
e11.8002.000
L0.550REF
L10.3000.500
θ

Attention


1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5, In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

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