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| Categories | Mosfet Power Transistor | 
|---|---|
| Brand Name: | Original brand | 
| Model Number: | IGOT60R070D1AUMA1 | 
| Certification: | Original | 
| Place of Origin: | Original | 
| MOQ: | 800pcs | 
| Price: | Negotiation | 
| Payment Terms: | T/T | 
| Supply Ability: | 100000pcs | 
| Delivery Time: | 2-3days | 
| Packaging Details: | 800/Reel | 
| Product: | MOSFET 600V Cool GaN Power Transistor | 
| Technology: | GaN | 
| Package: | PG-DSO-20 | 
| Transistor Polarity: | N-Channel | 
| Installation: | SMD/SMT | 
| Pd-Power Dissipation: | 125 W | 
| Vds-Leakage source breakdown electric shock: | 600 V | 
Mosfet Power Transistor IGOT60R070D1AUMA1 MOSFET 600V CoolGaN Power Transistor
Features
• Enhancement mode transistor – Normally OFF switch
• Ultra fast switching
• No reverse-recovery charge
• Capable of reverse conduction
• Low gate charge, low output charge
• Superior commutation ruggedness
• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)
Benefits
• Improves system efficiency
• Improves power density
• Enables higher operating frequency
• System cost reduction savings
• Reduces EMI
| Categories | MOSFET 600V CoolGaN Power Transistor | 
|---|---|
| IGOT60R070D1AUMA1 | |
| Transistor Polarity | N-Channel | 
| Working Temperature Range | -55C to +150C | 
| Leakage Source on-resistance | 70 mOhms | 
| Package | PG-DSO-20 | 
| Pd-Power Dissipation | 125 W | 
| Vgs th-Gate Source threshold Voltage | 600 V | 
| Continous Leakage Current | 31 A | 
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