808nm Wavelength TO Can Laser Diode 200mW Output Power Single Emitter

808nm wavelength, 200mW output power, TO Packaged Single Emitter Diode Laser

HTOE's LDM-0808-200m-50 is a high-performance multiple transverse mode Fabry-Perot laser diode. The laser emits 200mW optical power with CW mode at 808nm wavelength. LDM-0808-200m-50 is sealed by standard TO-56 package with a flat window. Features and benefits a high electro-optical efficiency and narrow beam, LDM-0808-200m-50 provides reliable operating with a high bright laser beam, It's ideal for pumping Nd:YAG, illumination applications.

LDM-0808-200m-50 belongs to HTOE's LDM series, which based on Quantum-well epitaxy and ridge waveguide structure design. HTOE packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands.

Features

• 808nm center wavelength
• 200mW optical output power
• 20µm narrow emitting width
• High electro-optical effiency
• High reliablity
• With apact TO-56 package

Parameters(20℃)

Package Information

TOØ56 Package

Function Curve

P-I-V Curve Spectral Curve

Notice

1. Item model notice: LDM (Item model), **** (Center wavelength), **** (Output power), ** (Heat sink structure and item width).

2. Data in the sheet are all based on TOØ56 package testing.

3. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.

ESD Cautions

The primary cause of diode failure is unexpected electrostatic discharge. To help prevent device failures, be sure to handle devices with extreme care. Users should always wear an ESD wrist strap, ground all applicable work surfaces and follow anti-static techniques when handling diode lasers.

SAFETY INFORMATION

The laser light emitted from this laser diode is invisible but may be harmful to the human eye. Avoid eye exposure to the beam, both direct and reflected. Products are subject to the risks normally associated with sensitive electronic devices including static discharge, transients, and overload. Please ensure ESD protection prior to handling the products.

Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center.

• Established in 1999
• Registered Capital：227 million RMB
• Located in Shahe Industrial Park, Beijing
• Employees：~180
• Products: Semiconductor Lasers

Headquarter in Beijing：

• Over 3000m² of manufacturing space, and more than 1500m² clean room with class 1,000 and 10,000 ；
• The new factory planned with 11,000m², and under construction now.

R&D Platform

• National Optoelectronic Engineering Research Center
• Post-doctoral Research Center
• Engineering Technology Research Institute Optoelectronics Branch of China Energy Conservation Group

More than 30 core patents：

• Ep-Wafer Structure Design
• COMD control
• Electrode process
• Chip process
• Chip packaging
• Beam shaping
• Fiber coupling

Leading provider of laser diodes and laser-based solutions in China.