M25PE80-VMN6P 8-Mbit page-erasable serial flash memory with byte alterability 75 MHz SPI bus

M25PE80-VMN6P 8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Features

SPI bus compatible serial interface

8-Mbit page-erasable flash memory

Page size: 256 bytes – Page write in 11 ms (typical) – Page program in 0.8 ms (typical) – Page erase in 10 ms (typical)

Subsector erase (4 Kbytes)

Sector erase (64 Kbytes)

Bulk erase (8 Mbits)

2.7 V to 3.6 V single supply voltage

75 MHz clock rate (maximum)

Deep power-down mode 1 µA (typical)

Electronic signature – JEDEC standard two-byte signature (8014h) – Unique ID code (UID) with 16 bytes readonly, available upon customer request only in the T9HX process

Software write protection on a 64-Kbyte sector basis

Hardware write protection of the memory area selected using the BP0, BP1 and BP2 bits

More than 100 000 write cycles

More than 20 years data retention

Packages – ECOPACK® (RoHS compliant)

Description

The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page erase cycle followed by a page program cycle. The memory is organized as 16 sectors that are further divided up into 16 subsectors each (256 subsectors in total). Each sector contains 256 pages and each subsector contains 16 pages. Each page is 256-byte wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1 048 576 bytes. The memory can be erased a page at a time, using the page erase instruction, a subsector at a time, using the subsector erase instruction, a sector at a time, using the sector erase instruction, or as a whole, using the bulk erase instruction. The memory can be write protected by either hardware or software using a mix of volatile and non-volatile protection features, depending on the application needs. The protection granularity is of 64 Kbytes (sector granularity).

Important note

This datasheet details the functionality of the M25PE80 devices, based on the previous T7Y process or based on the current T9HX process (available since June 2007). Delivery of parts operating with a maximum clock rate of 75 MHz starts from week 8 of 2008.

What are the changes?

The M25PE80 in T9HX process offers the following additional features:

the whole memory array is partitioned into 4-Kbyte subsectors

two new instructions: write status register (WRSR) and 4-Kbyte subsector erase (SSE)

Status register: 4 bits can be written (BP0, BP1, BP2, SRWD)

WP input (pin 3): write protection limits are extended, depending on the value of the BP0, BP1, BP2, SRWD bits. The WP write protection remains the same if bits (BP2, BP1, BP0) are set to (0, 0, 1)

smaller die size allowing assembly into an SO8N package.

Suppressed feature:

The write protection (defined by the WL and LD lock bits) of the 4-Kbyte subsectors in the top and bottom sectors is no longer offered. For more details please refer to PCNMPG062148.

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