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74HC04D Integrated Circuit Chip Hex inverter high speed Si-gate CMOS devices

Categories Integrated Circuit Chip
Brand Name: Anterwell
Model Number: 74HC04D
Certification: new & original
Place of Origin: original factory
MOQ: 20pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 7600pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
supply voltage: −0.5 to +7.0 V
input diode current: ±20 mA
output diode current: ±20 mA
output source or sink current: ±25 mA
VCC or GND current: ±50 mA
storage temperature: −65 to +150 °C
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    74HC04D Integrated Circuit Chip Hex inverter high speed Si-gate CMOS devices


    74HC04; 74HCT04

    Hex inverter


    FEATURES

    • Complies with JEDEC standard no. 8-1A

    • ESD protection:

    HBM EIA/JESD22-A114-A exceeds 2000 V

    MM EIA/JESD22-A115-A exceeds 200 V.

    • Specified from −40 to +85 °C and −40 to +125 °C.


    DESCRIPTION

    The 74HC/HCT04 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT04 provide six inverting buffers.


    QUICK REFERENCE DATA

    GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns

    SYMBOLPARAMETERCONDITIONSTYPICALUNIT
    HC04HCT04
    tPHL/tPLHpropagation delay nA to nYCL = 15 pF; VCC = 5 V78ns
    CIinput capacitance3.53.5pF
    CPDpower dissipation capacitance per gatenotes 1 and 22124pF

    Notes

    1. CPD is used to determine the dynamic power dissipation (PD in µW).

    PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

    fi = input frequency in MHz;

    fo = output frequency in MHz;

    CL = output load capacitance in pF;

    VCC = supply voltage in Volts;

    N = total load switching outputs;

    Σ(CL × VCC2 × fo) = sum of the outputs.

    2. For 74HC04: the condition is VI = GND to VCC.

    For 74HCT04: the condition is VI = GND to VCC − 1.5 V.


    PINNING




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